參數(shù)資料
型號(hào)： AS7C3364FT36B-75TQIN
廠商： ALLIANCE SEMICONDUCTOR CORP
元件分類(lèi)： DRAM
英文描述： 3.3V 64K x 32/36 Flow Through Synchronous SRAM
中文描述： 64K X 36 STANDARD SRAM, 7.5 ns, PQFP100
封裝： 14 X 20 MM, LEAD FREE, TQFP-100
文件頁(yè)數(shù)： 16/19頁(yè)
文件大小： 417K
代理商： AS7C3364FT36B-75TQIN
AS7C3364FT32B
AS7C3364FT36B
2/8/05; v.1.2
Alliance Semiconductor
P. 16 of 19
AC test conditions
Output load: see Figure B, except for t
LZC
, t
LZOE
, t
HZOE
, t
HZC
, see Figure C.
Z
0
= 50
D
OUT
50
Figure B: Output load (A)
30 pF*
Figure A: Input waveform
10%
90%
GND
90%
10%
+3.0V
Input pulse level: GND to 3V. See Figure A.
Input rise and fall time (measured at 0.3V and 2.7V): 2 ns. See Figure A.
Input and output timing reference levels: 1.5V.
V
= 1.5V
for 3.3V I/O;
= V
DDQ
/2
for 2.5V I/O
353
/ 1538
5 pF*
319
/ 1667
D
OUT
GND
Figure C: Output load (B)
*including scope
and jig capacitanc
Thevenin equivalent:
+3.3V for 3.3V I/O;
/+2.5V for 2.5V I/O
Notes
1
2
3
4
5
6
For test conditions, see
AC Test Conditions
, Figures A, B, C.
This parameter measured with output load condition in Figure C.
This parameter is sampled, but not 100% tested.
t
HZOE
is less than t
LZOE
; and t
HZC
is less than t
LZC
at any given temperature and voltage.
tCH measured as HIGH above VIH and tCL measured as LOW below VIL.
This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs
must meet the setup and hold times for all rising edges of CLK when chip is enabled.
Write refers to
GWE
,
BWE
,
BW[a:d].
Chip select refers to
CE0
,
CE1
,
CE2
7
8
相關(guān)PDF資料
PDF描述
AS7C3364FT36B-80TQC 3.3V 64K x 32/36 Flow Through Synchronous SRAM
AS7C3364FT36B-80TQCN 3.3V 64K x 32/36 Flow Through Synchronous SRAM
AS7C3364FT36B-80TQI 3.3V 64K x 32/36 Flow Through Synchronous SRAM
AS7C3364FT36B-80TQIN 3.3V 64K x 32/36 Flow Through Synchronous SRAM
AS7C3364FT32B Shielding Gasket; Gasket Style:D-Shaped; Gasket Material:Beryllium Copper alloy #C17200; Length:24"; Height:0.25"; Thickness:0.0045"; Attenuation @ Peak Frequency:100dB; Body Material:Beryllium Copper alloy #C17200 RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AS7C3364FT36B-80TQC 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Flow Through Synchronous SRAM
AS7C3364FT36B-80TQCN 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Flow Through Synchronous SRAM
AS7C3364FT36B-80TQI 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Flow Through Synchronous SRAM
AS7C3364FT36B-80TQIN 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Flow Through Synchronous SRAM
AS7C3364NTD32B 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Pipelined SRAM with NTD
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