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參數(shù)資料
| 型號(hào)： | AS7C33512FT36A-85TQCN |
| 廠(chǎng)商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 3.3V 512K x 32/36 Flow-through synchronous SRAM |
| 中文描述： | 512K X 36 STANDARD SRAM, 8.5 ns, PQFP100 |
| 封裝： | 14 X 20 MM, LEAD FREE, TQFP-100 |
| 文件頁(yè)數(shù)： | 6/19頁(yè) |
| 文件大?。?/td> | 523K |
| 代理商： | AS7C33512FT36A-85TQCN |
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AS7C33512FT32A
AS7C33512FT36A
12/23/04, v 1.4
Alliance Semiconductor
6 of 19
Write enable truth table (per byte)
Key:
X = don’t care, L = low, H = high, n = a, b, c, d;
BWE
,
BWn
= internal write signal.
Asynchronous Truth Table
Notes:
1. X means “Don’t Care”
2. ZZ pin is pulled down internally
3. For write cycles that follows read cycles, the output buffers must be disabled with OE, otherwise data bus contention will occur.
4. Snooze mode means power down state of which stand-by current does not depend on cycle times
5. Deselected means power down state of which stand-by current depends on cycle times
Burst sequence table
Function
GWE
BWE
BWa
BWb
BWc
BWd
Write All Bytes
L
X
X
X
X
X
H
L
L
L
L
L
Write Byte a
H
L
L
H
H
H
Write Byte c and d
H
L
H
H
L
L
Read
H
H
X
X
X
X
H
L
H
H
H
H
Operation
ZZ
H
L
L
L
L
OE
X
L
H
X
X
I/O Status
High-Z
Dout
High-Z
Din, High-Z
High-Z
Snooze mode
Read
Write
Deselected
Interleaved burst address (LBO = 1)
A1 A0
0 0
2
nd
Address
0 1
3
rd
Address
1 0
4
th
Address
1 1
Linear burst address (LBO = 0)
A1 A0
0 0
0 1
1 0
1 1
A1 A0
0 1
0 0
1 1
1 0
A1 A0
1 0
1 1
0 0
0 1
A1 A0
1 1
1 0
0 1
0 0
A1 A0
0 1
1 0
1 1
1 0
A1 A0
1 0
1 1
0 0
0 1
A1 A0
1 1
0 0
0 1
1 0
1
st
Address
1
st
Address
2
nd
Address
3
rd
Address
4
th
Address
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS7C33512FT36A-85TQI | 3.3V 512K x 32/36 Flow-through synchronous SRAM |
| AS7C33512FT36A-85TQIN | 3.3V 512K x 32/36 Flow-through synchronous SRAM |
| AS7C33512FT36A-10TQC | DIODE ZENER SINGLE 1000mW 27Vz 9.5mA-Izt 0.05 5uA-Ir 20.6Vr DO41-GLASS 5K/AMMO |
| AS7C33512FT36A-10TQCN | DIODE ZENER SINGLE 1000mW 39Vz 6.5mA-Izt 0.05 5uA-Ir 29.7Vr DO41-GLASS 5K/AMMO |
| AS7C33512NTD18A | 3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C33512FT36A-85TQI | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 512K x 32/36 Flow-through synchronous SRAM |
| AS7C33512FT36A-85TQIN | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 512K x 32/36 Flow-through synchronous SRAM |
| AS7C33512NTD18A | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD |
| AS7C33512NTD18A-133TQC | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD |
| AS7C33512NTD18A-133TQCN | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD |
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