- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381342 > AS7C33512FT36A-10TQCN (ALLIANCE SEMICONDUCTOR CORP) DIODE ZENER SINGLE 1000mW 39Vz 6.5mA-Izt 0.05 5uA-Ir 29.7Vr DO41-GLASS 5K/AMMO PDF資料下載
參數(shù)資料
| 型號(hào)： | AS7C33512FT36A-10TQCN |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | DIODE ZENER SINGLE 1000mW 39Vz 6.5mA-Izt 0.05 5uA-Ir 29.7Vr DO41-GLASS 5K/AMMO |
| 中文描述： | 512K X 36 STANDARD SRAM, 10 ns, PQFP100 |
| 封裝： | 14 X 20 MM, LEAD FREE, TQFP-100 |
| 文件頁(yè)數(shù)： | 8/19頁(yè) |
| 文件大小： | 523K |
| 代理商： | AS7C33512FT36A-10TQCN |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)當(dāng)前第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)
AS7C33512FT32A
AS7C33512FT36A
12/23/04, v 1.4
Alliance Semiconductor
8 of 19
Absolute maximum ratings
Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to abso-
lute maximum rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
Recommended operating conditions at 2.5V I/O
Parameter
Symbol
Min
Max
Unit
Power supply voltage relative to GND
V
DD
, V
DDQ
–0.5
+4.6
V
Input voltage relative to GND (input pins)
V
IN
–0.5
V
DD
+ 0.5
V
Input voltage relative to GND (I/O pins)
V
IN
–0.5
V
DDQ
+ 0.5
V
Power dissipation
P
d
–
1.8
W
Short circuit output current
I
OUT
–
20
mA
Storage temperature
T
stg
–65
+150
o
C
Temperature under bias
T
bias
–65
+135
o
C
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
V
DD
3.135
3.3
3.465
V
Supply voltage for I/O
V
DDQ
3.135
3.3
3.465
V
Ground supply
Vss
0
0
0
V
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
V
DD
3.135
3.3
3.465
V
Supply voltage for I/O
V
DDQ
2.375
2.5
2.625
V
Ground supply
Vss
0
0
0
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS7C33512NTD18A | 3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD |
| AS7C33512NTD18A-133TQC | 3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD |
| AS7C33512NTD18A-133TQCN | 3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD |
| AS7C33512NTD18A-133TQI | 3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD |
| AS7C33512NTD18A-133TQIN | 3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C33512FT36A-10TQI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 32/36 Flow-through synchronous SRAM |
| AS7C33512FT36A-10TQIN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 32/36 Flow-through synchronous SRAM |
| AS7C33512FT36A-75TQC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 32/36 Flow-through synchronous SRAM |
| AS7C33512FT36A-75TQCN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 32/36 Flow-through synchronous SRAM |
| AS7C33512FT36A-75TQI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 32/36 Flow-through synchronous SRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。