參數(shù)資料
型號: AS7C33512FT18A-75TQI
廠商: ALLIANCE SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 3.3V 512K x 18 Flow-through synchronous SRAM
中文描述: 512K X 18 STANDARD SRAM, 7.5 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 12/19頁
文件大?。?/td> 506K
代理商: AS7C33512FT18A-75TQI
AS7C33512FT18A
11/30/04, v 1.1
Alliance Semiconductor
12 of 19
Timing waveform of write cycle
Note: Y = XOR when LBO = high/no connect; Y = ADD when LBO = low.
t
CYC
t
CL
t
ADSPS
t
ADSPH
t
ADSCS
t
ADSCH
t
AS
t
AH
t
WS
t
WH
t
CSS
t
ADVS
t
ADVH
t
DS
t
DH
CLK
ADSP
ADSC
Address
BWE
BW[a:b]
CE0, CE2
ADV
OE
Din
t
CSH
D(A2Y01)
D(A2Y10)
D(A3)
D(A2)
D(A2Y01)
D(A3Y01)
D(A3Y10)
D(A1)
D(A2Y11)
ADV SUSPENDS BURST
ADSC LOADS NEW ADDRESS
A1
A2
A3
t
CH
CE1
Read
Q(A1)
Suspend
Write
D(A1)
Read
Q(A2)
Suspend
Write
D(A2)
ADV
Burst
Write
D(A2Y01)
Suspend
Write
D(A2Y01)
ADV
Burst
Write
D(A2Y10)
Write
D(A3)
Burst
Write
D(A3Y01)
ADV
Burst
Write
D(A2Y11)
ADV
Burst
Write
D(A3Y10)
相關PDF資料
PDF描述
AS7C33512FT18A-75TQIN Film Capacitor; Voltage Rating:630VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.0082uF; Capacitance Tolerance: 10%; Lead Pitch:10mm; Leaded Process Compatible:No; Package/Case:C; Peak Reflow Compatible (260 C):No RoHS Compliant: No
AS7C33512FT18A-85TQC 3.3V 512K x 18 Flow-through synchronous SRAM
AS7C33512FT18A-85TQCN 3.3V 512K x 18 Flow-through synchronous SRAM
AS7C33512FT18A-85TQI 3.3V 512K x 18 Flow-through synchronous SRAM
AS7C33512FT18A-85TQIN 3.3V 512K x 18 Flow-through synchronous SRAM
相關代理商/技術參數(shù)
參數(shù)描述
AS7C33512FT18A-75TQIN 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 Flow-through synchronous SRAM
AS7C33512FT18A-85TQC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 Flow-through synchronous SRAM
AS7C33512FT18A-85TQCN 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 Flow-through synchronous SRAM
AS7C33512FT18A-85TQI 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 Flow-through synchronous SRAM
AS7C33512FT18A-85TQIN 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 Flow-through synchronous SRAM