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參數(shù)資料
| 型號(hào)： | AS7C33512FT18A-75TQC |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 3.3V 512K x 18 Flow-through synchronous SRAM |
| 中文描述： | 512K X 18 STANDARD SRAM, 7.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁(yè)數(shù)： | 1/19頁(yè) |
| 文件大?。?/td> | 506K |
| 代理商： | AS7C33512FT18A-75TQC |
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November 2004
Copyright Alliance Semiconductor. All rights reserved.
11/30/04, v 1.1
Alliance Semiconductor
1 of 19
3.3V 512K
×
18 Flow-through synchronous SRAM
AS7C33512FT18A
Features
Organization: 524,288 words × 18 bits
Fast clock to data access:
7.5/8.5/10ns
Fast OE access time: 3.5/4.0 ns
Fully synchronous flow-through operation
Asynchronous output enable control
Available in 100-pin TQFP package
Individual byte write and global write
Multiple chip enables for easy expansion
3.3V core power supply
2.5V or 3.3V I/O operation with separate VDDQ
Linear or interleaved burst control
Snooze mode for reduced power-standby
Common data inputs and data outputs
Logic block diagram
Selection guide
-75
8.5
7.5
300
110
30
-85
10
8.5
275
100
30
-10
12
10
250
90
30
Units
ns
ns
mA
mA
mA
Minimum cycle time
Maximum clock access time
Maximum operating current
Maximum standby current
Maximum CMOS standby current (DC)
Burst logic
ADSC
ADSP
ADV
LBO
CLK
CS
CLR
19
17
19
A[18:0]
19
Address
register
D
CS
Q
CLK
512K x 18
Memory
array
18
18
DQb
CLK
D
Byte Write
D
registers
Q
DQa
CLK
Q
Enable
register
CLK
D
Q
Enable
rdelay
CLK
D
Q
Output
registers
CLK
Input
registers
Power
down
DQ[a,b]
2
CE0
CE2
BW
b
BW
a
OE
ZZ
OE
CLK
BWE
GWE
18
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS7C33512FT18A-75TQCN | 3.3V 512K x 18 Flow-through synchronous SRAM |
| AS7C33512FT18A-75TQI | 3.3V 512K x 18 Flow-through synchronous SRAM |
| AS7C33512FT18A-75TQIN | Film Capacitor; Voltage Rating:630VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.0082uF; Capacitance Tolerance: 10%; Lead Pitch:10mm; Leaded Process Compatible:No; Package/Case:C; Peak Reflow Compatible (260 C):No RoHS Compliant: No |
| AS7C33512FT18A-85TQC | 3.3V 512K x 18 Flow-through synchronous SRAM |
| AS7C33512FT18A-85TQCN | 3.3V 512K x 18 Flow-through synchronous SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C33512FT18A-75TQCN | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 Flow-through synchronous SRAM |
| AS7C33512FT18A-75TQI | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 Flow-through synchronous SRAM |
| AS7C33512FT18A-75TQIN | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 Flow-through synchronous SRAM |
| AS7C33512FT18A-85TQC | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 Flow-through synchronous SRAM |
| AS7C33512FT18A-85TQCN | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 Flow-through synchronous SRAM |
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