參數(shù)資料
型號: AS7C332MNTF18A-85TQIN
廠商: ALLIANCE SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 3.3V 2M x 18 Flowthrough SRAM with NTD
中文描述: 2M X 18 ZBT SRAM, 8.5 ns, PQFP100
封裝: 14 X 20 MM, LEAD FREE, TQFP-100
文件頁數(shù): 1/18頁
文件大?。?/td> 417K
代理商: AS7C332MNTF18A-85TQIN
December 2004
Copyright Alliance Semiconductor. All rights reserved.
AS7C332MNTF18A
12/23/04, v 1.2
Alliance Semiconductor
P. 1 of 18
3.3V 2M x 18 Flowthrough SRAM with NTD
TM
Features
Organization: 2,097,152 words × 18 bits
NTD
architecture for efficient bus operation
Fast clock to data access: 7.5/8.5/10 ns
Fast OE access time: 3.5/4.0 ns
Fully synchronous operation
Flow-through mode
Asynchronous output enable control
Available in 100-pin TQFP package
Byte write enables
Clock enable for operation hold
Multiple chip enables for easy expansion
3.3V core power supply
2.5V or 3.3V I/O operation with separate V
DDQ
Self-timed write cycles
Interleaved or linear burst modes
Snooze mode for standby operation
Logic block diagram
Selection guide
-75
8.5
7.5
325
140
90
-85
10
8.5
300
130
90
-10
12
10
375
130
90
Units
ns
ns
mA
mA
mA
Minimum cycle time
Maximum clock access time
Maximum operating current
Maximum standby current
Maximum CMOS standby current (DC)
W
register
burst logic
D
Q
CLK
Output
buffer
DQ [a,b]
20
20
CLK
CEN
CE0
CE1
CE2
A[19:0]
OE
Control
logic
CLK
Data
input
register
D
Q
CLK
18
18
OE
2M x 18
SRAM
array
R/W
DQ [a,b]
BWa
BWb
CLK
Q
D
ADV / LD
LBO
ZZ
addr. registers
Write delay
20
CLK
18
18
18
18
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