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參數(shù)資料
| 型號： | AS7C33256NTF18B-75TQC |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 256K x 18 Flowthrough Synchronous SRAM with NTD |
| 中文描述： | 256K X 18 ZBT SRAM, 7.5 ns, PQFP100 |
| 封裝： | 14 X 20 MM, TQFP-100 |
| 文件頁數(shù)： | 15/18頁 |
| 文件大?。?/td> | 427K |
| 代理商： | AS7C33256NTF18B-75TQC |
AS7C33256NTF18B
4/13/05, v 1.3
Alliance Semiconductor
P. 15 of 18
AC test conditions
Output load: For t
LZC
, t
LZOE
, t
HZOE
, and t
HZC
, see Figure C. For all others, see Figure B.
Notes:
1) For test conditions, see “AC test conditions”, Figures A, B, C
2) This parameter measured with output load condition in Figure C.
3) This parameter is sampled, but not 100% tested.
4) t
HZOE
is less than t
LZOE
and t
HZC
is less than t
LZC
at any given temperature and voltage.
5) t
CH
measured high above V
IH
and t
CL
measured as low below V
IL
6) This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must
meet the setup and hold times with stable logic levels for all rising edges of CLK when chip is enabled.
7) Write refers to
R/
W
and
BW[a,b]
.
8) Chip select refers to
CE0
,
CE1
, and
CE2
.
Z
0
= 50
D
OUT
50
Figure B: Output load (A)
30 pF*
Figure A: Input waveform
10%
90%
GND
90%
10%
+3.0V
Input pulse level: GND to 3V. See Figure A.
Input rise and fall time (measured at 0.3V and 2.7V): 1.0V/ns. See Figure A.
Input and output timing reference levels: 1.5V.
V
L
= 1.5V
for 3.3V I/O;
= V
DDQ
/2
for 2.5V I/O
Thevenin equivalent:
+3.3V for 3.3V I/O;
/+2.5V for 2.5V I/O
353
/1538
5 pF*
319
/1667
D
OUT
GND
Figure C: Output load(B)
*including scope
and jig capacitance
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| AS7C33256NTF18B-75TQCN | 3.3V 256K x 18 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF18B-75TQI | 3.3V 256K x 18 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF18B-75TQIN | 3.3V 256K x 18 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF18B-80TQC | 3.3V 256K x 18 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF18B-80TQCN | 3.3V 256K x 18 Flowthrough Synchronous SRAM with NTD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C33256NTF18B-75TQCN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K x 18 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF18B-75TQI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K x 18 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF18B-75TQIN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K x 18 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF18B-80TQC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K x 18 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF18B-80TQCN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K x 18 Flowthrough Synchronous SRAM with NTD |
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