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參數(shù)資料
| 型號： | AS7C33256NTD36A-133TQIN |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 256K x 2/36 Pipelined burst Synchronous SRAM with NTD |
| 中文描述： | 256K X 36 ZBT SRAM, 4.2 ns, PQFP100 |
| 封裝： | 14 X 20 MM, LEAD FREE, TQFP-100 |
| 文件頁數(shù)： | 1/19頁 |
| 文件大?。?/td> | 441K |
| 代理商： | AS7C33256NTD36A-133TQIN |
November 2004
Copyright Alliance Semiconductor. All rights reserved.
AS7C33256NTD32A
AS7C33256NTD36A
11/30/04, v. 2.1
Alliance Semiconductor
P. 1 of 19
3.3V 256K×32/36 Pipelined burst Synchronous SRAM with NTD
TM
Features
Organization: 262,144 words × 32 or 36 bits
NTD
architecture for efficient bus operation
Fast clock speeds to 166 MHz
Fast clock to data access: 3.5/4.0 ns
Fast OE access time: 3.5/4.0 ns
Fully synchronous operation
Common data inputs and data outputs
Asynchronous output enable control
Available in 100-pin TQFP
Byte write enables
Clock enable for operation hold
Multiple chip enables for easy expansion
3.3 core power supply
2.5V or 3.3V I/O operation with separate V
DDQ
Self-timed write cycles
Interleaved or linear burst modes
Snooze mode for standby operation
Logic Block Diagram
Selection Guide
-166
-133
Units
Minimum cycle time
Maximum clock frequency
6
7.5
133
ns
166
MHz
Maximum clock access time
3.5
4
ns
Maximum operating current
Maximum standby current
475
130
400
100
mA
mA
Maximum CMOS standby current (DC)
30
30
mA
W
Address
register
Burst logic
D
Q
CLK
Output
Register
DQ[a:d]
36/32
36/32
18
18
CLK
CEN
CE0
CE1
CE2
A[17:0]
OE
CLK
Control
logic
CLK
Data
Input
Register
D
Q
CLK
36/32
36/32
36/32
OE
256K x 32/36
SRAM
Array
R/W
BWa
BWb
DQ [a:d]
BWc
BWd
CLK
Q
D
ADV / LD
LBO
ZZ
addr. registers
Write delay
36/32
18
CLK
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS7C33256NTF18B | 3.3V 256K x 18 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF18B-10TQC | 3.3V 256K x 18 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF18B-10TQCN | 3.3V 256K x 18 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF18B-10TQI | 3.3V 256K x 18 Flowthrough Synchronous SRAM with NTD |
| AS7C33256NTF18B-10TQIN | 3.3V 256K x 18 Flowthrough Synchronous SRAM with NTD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C33256NTD36A-166TQC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K x 2/36 Pipelined burst Synchronous SRAM with NTD |
| AS7C33256NTD36A-166TQCN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K x 2/36 Pipelined burst Synchronous SRAM with NTD |
| AS7C33256NTD36A-166TQI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K x 2/36 Pipelined burst Synchronous SRAM with NTD |
| AS7C33256NTD36A-166TQIN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K x 2/36 Pipelined burst Synchronous SRAM with NTD |
| AS7C33256NTF18B | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K x 18 Flowthrough Synchronous SRAM with NTD |
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