參數(shù)資料
型號(hào): AS7C331MNTF18A
廠商: Alliance Semiconductor Corporation
英文描述: 3.3V 1M x 18 Flowthrough Synchronous SRAM with NTD
中文描述: 3.3V的100萬× 18直通同步SRAM與新臺(tái)幣
文件頁數(shù): 7/18頁
文件大?。?/td> 424K
代理商: AS7C331MNTF18A
AS7C331MNTF18A
12/23/04, v 1.2
Alliance Semiconductor
P. 7 of 18
Absolute maximum ratings
Note: Stresses greater than those listed in this table may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
Recommended operating conditions at 2.5V I/O
Parameter
Symbol
V
DD
, V
DDQ
V
IN
V
IN
P
D
I
OUT
T
stg
T
bias
Min
–0.5
–0.5
–0.5
–65
–65
Max
+4.6
Unit
V
V
V
W
mA
o
C
o
C
Power supply voltage relative to GND
Input voltage relative to GND (input pins)
Input voltage relative to GND (I/O pins)
Power dissipation
DC output current
Storage temperature
Temperature under bias
V
DD
+ 0.5
V
DDQ
+ 0.5
1.8
20 mA
+150
+135
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
V
DD
3.135
3.3
3.465
V
Supply voltage for I/O
V
DDQ
3.135
3.3
3.465
V
Ground supply
Vss
0
0
0
V
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
V
DD
3.135
3.3
3.465
V
Supply voltage for I/O
V
DDQ
2.375
2.5
2.625
V
Ground supply
Vss
0
0
0
V
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