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參數(shù)資料
| 型號(hào)： | AS7C33128NTF18B |
| 廠(chǎng)商： | Alliance Semiconductor Corporation |
| 英文描述： | 3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD |
| 中文描述： | 3.3 128K的× 18直通同步SRAM與新臺(tái)幣 |
| 文件頁(yè)數(shù)： | 7/19頁(yè) |
| 文件大小： | 429K |
| 代理商： | AS7C33128NTF18B |
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AS7C33128NTF18B
4/28/05, v 1.0
Alliance Semiconductor
P. 7 of 19
State diagram for NTD SRAM
Absolute maximum ratings
Note: Stresses greater than those listed in this table may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
*
V
DDQ
cannot be greater than V
DD
Recommended operating conditions at 2.5V I/O
*
V
DDQ
cannot be greater than V
DD
Parameter
Symbol
V
DD
, V
DDQ
V
IN
V
IN
P
D
I
OUT
T
stg
T
bias
Min
–0.5
–0.5
–0.5
–
–
–65
–65
Max
+4.6
Unit
V
V
V
W
mA
o
C
o
C
Power supply voltage relative to GND
Input voltage relative to GND (input pins)
Input voltage relative to GND (I/O pins)
Power dissipation
DC output current
Storage temperature (plastic)
Temperature under bias
V
DD
+ 0.5
V
DDQ
+ 0.5
1.8
20
+150
+135
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
V
DD
V
DDQ*
3.135
3.3
3.465
V
Supply voltage for I/O
3.135
3.3
V
DD
V
Ground supply
Vss
0
0
0
V
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
V
DD
V
DDQ*
3.135
3.3
3.465
V
Supply voltage for I/O
2.375
2.5
V
DD
V
Ground supply
Vss
0
0
0
V
D
Dsel
Read
Read
Burst
Burst
Write
Read
Write
Burst
Read
R
W
Read
Burst
Write
D
Dse
Wrte
Wie
Burst
Dsel
Burst
Burst
Write
Read
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS7C33128NTF18B-10TQC | 3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD |
| AS7C33128NTF18B-10TQCN | LM3881 Power Sequencer; Package: MINI SOIC; No of Pins: 8; Qty per Container: 1000; Container: Reel |
| AS7C33128NTF18B-10TQI | 3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD |
| AS7C33128NTF18B-10TQIN | LM3881 Power Sequencer; Package: MINI SOIC; No of Pins: 8; Qty per Container: 3500; Container: Reel |
| AS7C33128NTF18B-75TQC | 3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C33128NTF18B-10TQC | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD |
| AS7C33128NTF18B-10TQCN | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD |
| AS7C33128NTF18B-10TQI | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD |
| AS7C33128NTF18B-10TQIN | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD |
| AS7C33128NTF18B-75TQC | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD |
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