- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄381331 > AS7C33128NTD36B-166TQIN (ALLIANCE SEMICONDUCTOR CORP) 3.3V 128Kx32/36 Pipelined SRAM with NTD PDF資料下載
參數(shù)資料
| 型號(hào)： | AS7C33128NTD36B-166TQIN |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 3.3V 128Kx32/36 Pipelined SRAM with NTD |
| 中文描述： | 128K X 36 ZBT SRAM, 3.5 ns, PQFP100 |
| 封裝： | 14 X 20 MM, LEAD FREE, TQFP-100 |
| 文件頁(yè)數(shù)： | 8/18頁(yè) |
| 文件大?。?/td> | 435K |
| 代理商： | AS7C33128NTD36B-166TQIN |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)當(dāng)前第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)
AS7C33128NTD32B
AS7C33128NTD36B
2/8/05; v.1.5
Alliance Semiconductor
P. 8 of 18
DC electrical characteristics for 3.3V I/O operation
DC electrical characteristics for 2.5V I/O operation
LBO and ZZ pins have an internal pull-up or pull-down, and input leakage = ±10
μ
A.
*
V
IH
max < VDD +1.5V for pulse width less than 0.2 X t
CYC
**
V
IL
min = -1.5 for pulse width less than 0.2 X t
CYC
I
DD
operating conditions and maximum limits
Parameter
Sym
Conditions
Min
Max
Unit
Input leakage current
|I
LI
|
V
DD
= Max, 0V < V
IN
< V
DD
OE
≥
V
IH
, V
DD
= Max, 0V < V
OUT
< V
DDQ
-2
2
μA
Output leakage current
|I
LO
|
-2
2
μA
Input high (logic 1) voltage
V
IH
Address and control pins
2*
V
DD
+0.3
V
I/O pins
2*
V
DDQ
+0.3
Input low (logic 0) voltage
V
IL
Address and control pins
-0.3**
0.8
V
I/O pins
-0.5**
0.8
Output high voltage
V
OH
I
OH
= –4 mA, V
DDQ
= 3.135V
2.4
–
V
Output low voltage
V
OL
I
OL
= 8 mA, V
DDQ
= 3.465V
–
0.4
V
Parameter
Sym
Conditions
Min
Max
Unit
Input leakage current
|I
LI
|
V
DD
= Max, 0V < V
IN
< V
DD
OE
≥
V
IH
, V
DD
= Max, 0V < V
OUT
< V
DDQ
-2
2
μA
Output leakage current
|I
LO
|
-2
2
μA
Input high (logic 1) voltage
V
IH
Address and control pins
1.7*
V
DD
+0.3
V
I/O pins
1.7*
V
DDQ
+0.3
V
Input low (logic 0) voltage
V
IL
Address and control pins
-0.3**
0.7
V
I/O pins
-0.3**
0.7
V
Output high voltage
V
OH
I
OH
= –4 mA, V
DDQ
= 2.375V
1.7
–
V
Output low voltage
V
OL
I
OL
= 8 mA, V
DDQ
= 2.625V
–
0.7
V
Parameter
Sym
Test conditions
-200
-166
-133
Unit
Operating power supply
current
1
1
I
CC
given with no output loading. I
CC
increases with faster cycle times and greater output loading.
I
CC
CE0 < V
IL
, CE1 > V
IH
, CE2 < V
IL
, f = f
Max
,
I
OUT
= 0 mA, ZZ
<
V
IL
375
350
325
mA
Standby power supply
current
I
SB
All V
IN
≤
0.2V or >
V
DD
– 0.2V,
Deselected,
f = f
Max
, ZZ
<
V
IL
135
120
110
mA
I
SB1
Deselected, f = 0, ZZ
<
0.2V,
all V
IN
≤
0.2V or
≥
V
DD
– 0.2V
30
30
30
I
SB2
Deselected, f = f
Max
, ZZ
≥
V
DD
– 0.2V,
all V
IN
≤
V
IL
or
≥
V
IH
30
30
30
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS7C33128NTD36B-200TQC | 3.3V 128Kx32/36 Pipelined SRAM with NTD |
| AS7C33128NTD36B-200TQCN | 3.3V 128Kx32/36 Pipelined SRAM with NTD |
| AS7C33128NTD36B-200TQI | 3.3V 128Kx32/36 Pipelined SRAM with NTD |
| AS7C33128NTD36B-200TQIN | 3.3V 128Kx32/36 Pipelined SRAM with NTD |
| AS7C33128NTD32B | 3.3V 128Kx32/36 Pipelined SRAM with NTD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C33128NTD36B-200TQC | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 128Kx32/36 Pipelined SRAM with NTD |
| AS7C33128NTD36B-200TQCN | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 128Kx32/36 Pipelined SRAM with NTD |
| AS7C33128NTD36B-200TQI | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 128Kx32/36 Pipelined SRAM with NTD |
| AS7C33128NTD36B-200TQIN | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 128Kx32/36 Pipelined SRAM with NTD |
| AS7C33128NTF18B | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。