參數(shù)資料
型號(hào)： AS7C33128FT32B-65TQC
廠商： ALLIANCE SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 3.3V 128K x 32/36 Flow Through Synchronous SRAM
中文描述： 128K X 32 STANDARD SRAM, 6.5 ns, PQFP100
封裝： 14 X 20 MM, TQFP-100
文件頁(yè)數(shù)： 9/19頁(yè)
文件大?。?/td> 416K
代理商： AS7C33128FT32B-65TQC
AS7C33128FT32B
AS7C33128FT36B
2/8/05; v.1.2
Alliance Semiconductor
P. 9 of 19
DC electrical characteristics for 3.3V I/O operation
DC electrical characteristics for 2.5V I/O operation
LBO and ZZ pins have an internal pull-up or pull-down, and input leakage = ±10
μ
A.
*
V
IH
max < VDD +1.5V for pulse width less than 0.2 X t
CYC
**
V
IL
min = -1.5 for pulse width less than 0.2 X t
CYC
I
DD
operating conditions and maximum limits
Parameter
Sym
Conditions
Min
Max
Unit
Input leakage current
|I
LI
|
|I
LO
|
V
DD
= Max, 0V < V
IN
< V
DD
OE
≥
V
IH
, V
DD
= Max, 0V < V
OUT
< V
DDQ
Address and control pins
-2
2
μA
Output leakage current
-2
2
μA
Input high (logic 1) voltage
V
IH
2*
V
DD
+0.3
V
DDQ
+0.3
0.8
V
I/O pins
2*
Input low (logic 0) voltage
V
IL
Address and control pins
-0.3**
V
I/O pins
-0.5**
0.8
Output high voltage
V
OH
V
OL
I
OH
= –4 mA, V
DDQ
= 3.135V
I
OL
= 8 mA, V
DDQ
= 3.465V
2.4
–
V
Output low voltage
–
0.4
V
Parameter
Sym
Conditions
Min
Max
Unit
Input leakage current
|I
LI
|
|I
LO
|
V
DD
= Max, 0V < V
IN
< V
DD
OE
≥
V
IH
, V
DD
= Max, 0V < V
OUT
< V
DDQ
Address and control pins
-2
2
μA
Output leakage current
-2
2
μA
Input high (logic 1) voltage
V
IH
1.7*
V
DD
+0.3
V
DDQ
+0.3
0.7
V
I/O pins
1.7*
V
Input low (logic 0) voltage
V
IL
Address and control pins
-0.3**
V
I/O pins
-0.3**
0.7
V
Output high voltage
V
OH
V
OL
I
OH
= –4 mA, V
DDQ
= 2.375V
I
OL
= 8 mA, V
DDQ
= 2.625V
1.7
–
V
Output low voltage
–
0.7
V
Parameter
Sym
Conditions
-65
-75
-80
-10
Unit
Operating power supply current
1
1 I
CC
given with no output loading. I
CC
increases with faster cycle times and greater output loading.
I
CC
CE0 < V
IL
, CE1 > V
IH
, CE2 < V
IL
, f = f
Max
,
I
OUT
= 0 mA, ZZ
<
V
IL
All V
IN
≤
0.2V or >
V
DD
– 0.2V,
Deselected,
f = f
Max
, ZZ
<
V
IL
Deselected, f = 0, ZZ
<
0.2V,
all V
IN
≤
0.2V or
≥
V
DD
– 0.2V
Deselected, f = f
Max
, ZZ
≥
V
DD
– 0.2V,
all V
IN
≤
V
IL
or
≥
V
IH
275
250
215
185
mA
Standby power supply current
I
SB
90
85
75
75
mA
I
SB1
30
30
30
30
I
SB2
30
30
30
30
相關(guān)PDF資料
PDF描述
AS7C33128FT32B-65TQCN 3.3V 128K x 32/36 Flow Through Synchronous SRAM
AS7C33128FT32B-65TQI 3.3V 128K x 32/36 Flow Through Synchronous SRAM
AS7C33128FT32B-65TQIN 3.3V 128K x 32/36 Flow Through Synchronous SRAM
AS7C33128FT32B-75TQC 3.3V 128K x 32/36 Flow Through Synchronous SRAM
AS7C33128FT32B-75TQCN 3.3V 128K x 32/36 Flow Through Synchronous SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AS7C33128FT32B-65TQCN 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flow Through Synchronous SRAM
AS7C33128FT32B-65TQI 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flow Through Synchronous SRAM
AS7C33128FT32B-65TQIN 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flow Through Synchronous SRAM
AS7C33128FT32B-75TQC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flow Through Synchronous SRAM
AS7C33128FT32B-75TQCN 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 128K x 32/36 Flow Through Synchronous SRAM
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