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參數(shù)資料
| 型號： | AS7C3256A-12JI |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | Dual 4-Input Positive-NAND Gate 14-SSOP -40 to 85 |
| 中文描述： | 32K X 8 STANDARD SRAM, 12 ns, PDSO28 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-28 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 248K |
| 代理商： | AS7C3256A-12JI |
AS7C3256A
4/23/04; v.2.0
Alliance Semiconductor
P. 6 of 9
AC test conditions
- Output load: see Figure B
- Input pulse level: GND to 3.0V. See Figure A.
- Input rise and fall times: 2 ns. See Figure A.
- Input and output timing reference levels: 1.5V.
Notes
1
2
3
4
5
6
7
8
9
10 N/A
11
12 N/A
13 C=30pF, except on High Z and Low Z parameters, where C=5pF.
During V
CC
power-up, a pull-up resistor to V
CC
on
CE
is required to meet I
SB
specification.
This parameter is sampled, but not 100% tested.
For test conditions, see
AC Test Conditions
, Figures A, B.
These parameters are specified with CL = 5pF, as in Figures B. Transition is measured
±
500mV from steady-state voltage.
This parameter is guaranteed, but not tested.
WE
is High for read cycle.
CE
and
OE
are Low for read cycle.
Address valid prior to or coincident with
CE
transition Low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
All write cycle timings are referenced from the last valid address to the first transitioning address.
350
C
13
320
D
out
GND
+3.3V
168
D
out
+1.72V
Figure B: Output load
Thevenin equivalent
10%
90%
10%
90%
GND
+3.0V
Figure A: Input pulse
2 ns
相關(guān)PDF資料 |
PDF描述 |
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| AS7C3256A-12TC | Dual 4-Input Positive-NAND Gate 14-SOIC -40 to 85 |
| AS7C3256A-12TCN | Dual 4-Input Positive-NAND Gate 14-SOIC -40 to 85 |
| AS7C3256A-12TI | Dual 4-Input Positive-NAND Gate 14-TVSOP -40 to 85 |
| AS7C3256A-12TIN | Dual 4-Input Positive-NAND Gate 14-TVSOP -40 to 85 |
| AS7C3256A-15JC | Dual 4-Input Positive-NAND Gate 14-TVSOP -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C3256A-12JIN | 功能描述:靜態(tài)隨機(jī)存取存儲器 256K 3.3V 12ns FAST 32K x 8 Asynch 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C3256A-12JINTR | 功能描述:靜態(tài)隨機(jī)存取存儲器 256K 3.3V 12ns FAST 32K x 8 Asynch 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C3256A-12TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 32K X 8 CMOS SRAM (Common I/O) |
| AS7C3256A-12TCN | 功能描述:靜態(tài)隨機(jī)存取存儲器 256K 3.3V 12ns FAST 32K x 8 Asynch 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C3256A-12TCNTR | 功能描述:靜態(tài)隨機(jī)存取存儲器 256K 3.3V 12ns FAST 32K x 8 Asynch 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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