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參數(shù)資料
| 型號： | AS7C31026A-20TC |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 5V/3.3V 64K X 16 CMOS SRAM |
| 中文描述： | 64K X 16 STANDARD SRAM, 20 ns, PDSO44 |
| 封裝： | 10.20 X 18.40 MM, TSOP2-44 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 148K |
| 代理商： | AS7C31026A-20TC |
AS7C1026A
AS7C31026A
2/6/01; V0.9
Alliance Semiconductor
P. 3 of 9
Recommended operating conditions
Parameter
V
IL
min. = –3.0V for pulse width less than t
RC
/2.
DC operating characteristics (over the operating range)
1
Capacitance (f = 1MHz, T
a
= 25
°
C, V
CC
= NOMINAL)
2
Device
AS7C1026A
AS7C31026A
AS7C1026A
AS7C31026A
Both
commercial
industrial
Symbol
V
CC
V
CC
V
IH
V
IH
V
IL
T
A
T
A
Min
4.5
3.0
2.2
2.0
–0.5
0
–40
Nominal
5.0
3.3
–
–
–
–
–
Max
5.5
3.6
Unit
V
V
V
V
V
o
C
o
C
Supply voltage
Input voltage
V
CC
+ 0.5
V
CC
+ 0.5
0.8
70
85
Ambient operating temperature
Parameter
Sym
Test conditions
Device
-10
-12
-15
-20
Unit
Min Max Min Max Min
Max
Min
Max
Input leakage
current
|
I
LI
|
V
CC
= Max
V
IN
= GND to V
CC
V
CC
= Max
CE = V
IH
,
V
OUT
= GND to V
CC
V
CC
= Max, CE
≤
V
IL
outputs open,
f = f
Max
= 1/t
RC
V
CC
= Max, CE
≤
V
IL
,
outputs open,
f = f
Max
= 1/t
RC
V
CC
= Max, CE
≥
V
CC
–0.2V,
V
IN
≤
GND + 0.2V or
V
IN
≥
V
CC
–0.2V, f = 0
I
OL
= 8 mA, V
CC
= Min
I
OH
= –4 mA, V
CC
= Min
V
CC
= 2.0V
CE
≥
V
CC
–0.2V
V
IN
≥
V
CC
–0.2V or
V
IN
≤
0.2V
Both
–
1
–
1
–
1
–
1
μA
Output leakage
current
|
I
LO
|
Both
–
1
–
1
–
1
–
1
μA
Operating power
supply current
I
CC
AS7C1026A
–
120
–
110
–
100
–
100
mA
AS7C31026A
–
90
–
80
–
80
–
80
mA
Standby
power supply
current
I
SB
AS7C1026A
–
30
–
25
–
20
–
20
mA
AS7C31026A
–
30
–
25
–
20
–
20
I
SB1
AS7C1026A
–
10
–
10
–
10
–
15
mA
AS7C31026A
–
10
–
10
–
10
–
15
Output
voltage
V
OL
V
OH
AS7C1026A
–
0.4
–
0.4
–
0.4
–
0.4
V
AS7C31026A
2.4
–
2.4
–
2.4
–
2.4
–
V
Data retention
current
I
CCDR
AS7C1026A
1
1
1
5
mA
AS7C31026A
1
1
1
5
mA
Parameter
Symbol
Signals
Test conditions
Max
Unit
Input capacitance
C
IN
C
I/O
A, CE, WE, OE, LB, UB
V
IN
= 0V
V
IN
= V
OUT
= 0V
5
pF
I/O capacitance
I/O
7
pF
相關PDF資料 |
PDF描述 |
|---|---|
| AS7C1026A-10 | 5V/3.3V 64K X 16 CMOS SRAM |
| AS7C1026A-10BC | 5V/3.3V 64K X 16 CMOS SRAM |
| AS7C1026A-10JC | 5V/3.3V 64K X 16 CMOS SRAM |
| AS7C1026A-10JI | 5V/3.3V 64K X 16 CMOS SRAM |
| AS7C1026A-10TC | 5V/3.3V 64K X 16 CMOS SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C31026A-20TI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V/3.3V 64K X 16 CMOS SRAM |
| AS7C31026B | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3 V 64K X 16 CMOS SRAM |
| AS7C31026B-10JC | 制造商:Alliance Memory Inc 功能描述:AS7C31026B Series 1-Mbit (64 K x 16) 3.3 V 10 ns CMOS Static RAM - SOJ-44 |
| AS7C31026B-10JCN | 功能描述:靜態(tài)隨機存取存儲器 1M, 3.3V, 10ns, FAST 64K x 16 Asynch 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C31026B-10JCNTR | 功能描述:靜態(tài)隨機存取存儲器 1M, 3.3V, 10ns, FAST 64K x 16 Asynch 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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