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參數(shù)資料
| 型號(hào)： | AS7C256A-10TI |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 5V 32K X 8 CMOS SRAM (Common I/O) |
| 中文描述： | 32K X 8 STANDARD SRAM, 10 ns, PDSO28 |
| 封裝： | 8 X 13.4 MM, TSOP1-28 |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大小： | 248K |
| 代理商： | AS7C256A-10TI |
AS7C256A
9/24/04; v.1.2
Alliance Semiconductor
P. 6 of 9
AC test conditions
- Output load: see Figure B
- Input pulse level: GND to V
CC
See Figure A.
- Input rise and fall times: 2 ns. See Figure A.
- Input and output timing reference levels: 1.5V.
Notes
1
2
3
4
5
6
7
8
9
10 C=30pF, except on High Z and Low Z parameters, where C=5pF.
During V
CC
power-up, a pull-up resistor to V
CC
on
CE
is required to meet I
SB
specification.
For test conditions, see
AC Test Conditions
, Figures A, B.
These parameters are specified with CL = 5pF, as in Figures B. Transition is measured
±
500mV from steady-state voltage.
This parameter is guaranteed, but not tested.
WE
is High for read cycle.
CE
and
OE
are Low for read cycle.
Address valid prior to or coincident with
CE
transition Low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
All write cycle timings are referenced from the last valid address to the first transitioning address.
255
C
10
480
D
out
GND
+5.0V
168
D
out
+1.72V
Figure B: Output load
Thevenin equivalent
10%
90%
10%
90%
GND
V
CC
Figure A: Input pulse
2 ns
相關(guān)PDF資料 |
PDF描述 |
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| AS7C256A-10TIN | 5V 32K X 8 CMOS SRAM (Common I/O) |
| AS7C256A-12JC | 5V 32K X 8 CMOS SRAM (Common I/O) |
| AS7C256A-12JCN | 5V 32K X 8 CMOS SRAM (Common I/O) |
| AS7C256A-12JI | 5V 32K X 8 CMOS SRAM (Common I/O) |
| AS7C256A-12TC | 5V 32K X 8 CMOS SRAM (Common I/O) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C256A-10TIN | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256K, 5V, 10ns, FAST 32K x 8 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C256A-10TINTR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256K, 5V, 10ns, FAST 32K x 8 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C256A-12JC | 制造商:Alliance Semiconductor Corporation 功能描述:Static RAM, 32Kx8, 28 Pin, Plastic, SOJ |
| AS7C256A-12JCN | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256K, 5V, 12ns, FAST 32K x 8 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C256A-12JCNTR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256K, 5V, 12ns, FAST 32K x 8 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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