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參數(shù)資料
| 型號(hào)： | AS7C256-35SC |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | High Performance 32Kx8 CMOS SRAM |
| 中文描述： | 32K X 8 STANDARD SRAM, 35 ns, PDSO28 |
| 封裝： | 0.330 INCH, PLASTIC, SOIC-28 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 125K |
| 代理商： | AS7C256-35SC |
AS7C256
AS7C256L
2
The AS7C256 is a high performance CMOS 262,144-bit
Static Random Access Memory (SRAM) organized as
32,768 words
×
8 bits. It is designed for memory applica-
tions where fast data access, low power, and simple interfac-
ing are desired.
Equal address access and cycle times (t
AA
, t
RC
, t
WC
) of
10/12/15/20/25/35 ns with output enable access times (t
OE
)
of 3/3/4/5/6/8 ns are ideal for high performance applica-
tions. A chip enable (CE) input permits easy memory
expansion with multiple-bank memory organizations.
When CE is HIGH the device enters standby mode. The
standard AS7C256 is guaranteed not to exceed 11 mW
power consumption in standby mode; the L version is guar-
anteed not to exceed 2.75 mW, and typically requires only
500
μ
W. The L version also offers 2.0V data retention, with
maximum power consumption in this mode of 300
μ
W.
A write cycle is accomplished by asserting chip enable (CE)
and write enable (WE) LOW. Data on the input pins
I/O0-I/O7 is written on the rising edge of WE (write cycle 1)
or CE (write cycle 2). To avoid bus contention, external
devices should drive I/O pins only after outputs have been
disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting chip enable (CE)
and output enable (OE) LOW, with write enable (WE)
HIGH. The chip drives I/O pins with the data word refer-
enced by the input address. When chip enable or output
enable is HIGH, or write enable is LOW, output drivers stay
in high-impedance mode.
All chip inputs and outputs are TTL-compatible, and opera-
tion is from a single 5V supply. The AS7C256 is packaged
in all high volume industry standard packages.
FUNCTIONAL DESCRIPTION
.
Parameter
Symbol
Min
Max
Unit
Voltage on Any Pin Relative to GND
V
t
P
D
T
stg
T
bias
I
out
–0.5
+7.0
V
Power Dissipation
–
1.0
W
o
C
o
C
Storage Temperature (Plastic)
–55
+150
Temperature Under Bias
–10
+85
DC Output Current
–
20
mA
NOTE:
Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CE
WE
OE
Data
Mode
H
X
X
High Z
Standby (I
SB
, I
SB1
)
Output Disable
L
H
H
High Z
L
H
L
D
out
D
in
Read
L
L
X
Write
Key:
X = Don’t Care, L = LOW, H = HIGH
ABSOLUTE MAXIMUM RATINGS
TRUTH TABLE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS7C256-35TC | High Performance 32Kx8 CMOS SRAM |
| AS7C256-10 | High Performance 32Kx8 CMOS SRAM |
| AS7C256-10JC | High Performance 32Kx8 CMOS SRAM |
| AS7C256-10PC | High Performance 32Kx8 CMOS SRAM |
| AS7C256-10SC | High Performance 32Kx8 CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C256-35TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:High Performance 32Kx8 CMOS SRAM |
| AS7C256A | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 32K X 8 CMOS SRAM (Common I/O) |
| AS7C256A-10JC | 制造商:Alliance Memory Inc 功能描述: |
| AS7C256A-10JCN | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256K, 5V, 10ns, FAST 32K x 8 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C256A-10JCNTR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256K, 5V, 10ns, FAST 32K x 8 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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