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參數(shù)資料
| 型號(hào)： | AS7C1026B-20TCN |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | High Speed CMOS Logic Triple 3-Input AND Gates 14-PDIP -55 to 125 |
| 中文描述： | 64K X 16 STANDARD SRAM, 20 ns, PDSO44 |
| 封裝： | 10.20 X 18.40 MM, LEAD FREE, TSOP2-44 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 122K |
| 代理商： | AS7C1026B-20TCN |
March 2004
Copyright Alliance Semiconductor. All rights reserved.
AS7C1026B
5 V 64K X 16 CMOS SRAM
3/26/04, v 1.3
Alliance Semiconductor
P. 1 of 10
Features
Industrial and commercial versions
Organization: 65,536 words × 16 bits
Center power and ground pins for low noise
High speed
- 10/12/15/20 ns address access time
- 5, 6, 7, 8 ns output enable access time
Low power consumption: ACTIVE
- 605 mW / max @ 10 ns
Low power consumption: STANDBY
- 55 mW / max CMOS I/O
6 T 0.18 u CMOS technology
Easy memory expansion with
CE
,
OE
inputs
TTL-compatible, three-state I/O
JEDEC standard packaging
- 44-pin 400 mil SOJ
- 44-pin TSOP 2-400
ESD protection
≥
2000 volts
Latch-up current
≥
200 mA
Logic block diagram
64 K × 16
Array
OE
LB
CE
WE
Column decoder
R
A0
A1
A2
A3
A4
A5
A6
A7
V
CC
GND
A
A
A
A
A
A
A
A
Control circuit
I/O0–I/O7
I/O8–I/O15
UB
I/O
buffer
Pin arrangement
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
I/O13
I/O12
GND
V
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC
A0
CE
I/O0
I/O1
I/O2
I/O3
V
CC
GND
I/O4
I/O5
I/O6
I/O7
WE
A15
A14
A13
A12
NC
44-Pin SOJ (400 mil), TSOP 2
UB
LB
I/O15
I/O14
2
3
4
A3
A2
A1
1
A4
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
43
42
41
44
A6
A7
OE
A5
A
Selection guide
-10
10
5
110
10
-12
12
6
100
10
-15
15
7
90
10
-20
20
8
80
10
Unit
ns
ns
mA
mA
Maximum address access time
Maximum output enable access time
Maximum operating current
Maximum CMOS standby current
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS7C1026B-20TI | High Speed CMOS Logic Triple 3-Input AND Gates 14-PDIP -55 to 125 |
| AS7C1026B-20TIN | High Speed CMOS Logic Triple 3-Input AND Gates 14-SOIC -55 to 125 |
| AS7C1026B-12JCN | 5 V 64K X 16 CMOS SRAM |
| AS7C1026B-12JI | 5 V 64K X 16 CMOS SRAM |
| AS7C1026B-12JIN | 5 V 64K X 16 CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C1026B-20TCNTR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M, 5V, 20ns FAST 64K x 16 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C1026B-20TI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5 V 64K X 16 CMOS SRAM |
| AS7C1026B-20TIN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5 V 64K X 16 CMOS SRAM |
| AS7C1026C | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5 V 64K X 16 CMOS SRAM |
| AS7C1026C-12JIN | 制造商:Alliance Memory Inc 功能描述:AS7C1026C Series 1-Mbit (64 K x 16) 5 V 12 ns CMOS Static RAM - SOJ-44 |
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