參數(shù)資料
型號: AS7C1025B-12TJIN
廠商: ALLIANCE SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 5V 128K X 8 CMOS SRAM (Center power and ground)
中文描述: 128K X 8 STANDARD SRAM, 12 ns, PDSO32
封裝: 0.300 INCH, SOJ-32
文件頁數(shù): 6/9頁
文件大?。?/td> 103K
代理商: AS7C1025B-12TJIN
AS7C1025B
3/26/04, v. 1.3
Alliance Semiconductor
P. 6 of 9
Write waveform 2 (CE controlled)
10,11
AC test conditions
– Output load: see Figure B.
– Input pulse level: GND to 3.5 V. See Figure A.
– Input rise and fall times: 2 ns. See Figure A.
– Input and output timing reference levels: 1.5 V.
Notes
1
2
3
4
5
6
7
8
9
10 N/A
11
12 N/A.
13 C = 30 pF, except all high Z and low Z parameters where C = 5 pF.
During V
CC
power-up, a pull-up resistor to V
CC
on
CE
is required to meet I
SB
specification.
This parameter is sampled, but not 100% tested.
For test conditions, see
AC Test Conditions
, Figures A and B.
t
CLZ
and t
CHZ
are specified with CL = 5 pF, as in Figure B. Transition is measured
±
500 mV from steady-state voltage.
This parameter is guaranteed, but not 100% tested.
WE
is high for read cycle.
CE
and
OE
are low for read cycle.
Address is valid prior to or coincident with
CE
transition low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
All write cycle timings are referenced from the last valid address to the first transitioning address.
t
AW
Address
CE
WE
D
OUT
t
CW
t
WP
t
DW
Data valid
t
DH
t
AH
t
WR
t
WZ
t
WC
t
AS
D
IN
168
Thevenin equivalent:
D
OUT
+1.728 V
255
C
13
480
D
OUT
GND
+5 V
Figure B: 5 V Output load
10%
90%
10%
90%
GND
+3.5 V
Figure A: Input pulse
2 ns
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