- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381315 > AS7C1025B-12JCN (ALLIANCE SEMICONDUCTOR CORP) 5V 128K X 8 CMOS SRAM (Center power and ground) PDF資料下載
參數(shù)資料
| 型號： | AS7C1025B-12JCN |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 5V 128K X 8 CMOS SRAM (Center power and ground) |
| 中文描述： | 128K X 8 STANDARD SRAM, 12 ns, PDSO32 |
| 封裝： | 0.400 INCH, SOJ-32 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大小： | 103K |
| 代理商： | AS7C1025B-12JCN |
AS7C1025B
3/26/04, v. 1.3
Alliance Semiconductor
P. 6 of 9
Write waveform 2 (CE controlled)
10,11
AC test conditions
– Output load: see Figure B.
– Input pulse level: GND to 3.5 V. See Figure A.
– Input rise and fall times: 2 ns. See Figure A.
– Input and output timing reference levels: 1.5 V.
Notes
1
2
3
4
5
6
7
8
9
10 N/A
11
12 N/A.
13 C = 30 pF, except all high Z and low Z parameters where C = 5 pF.
During V
CC
power-up, a pull-up resistor to V
CC
on
CE
is required to meet I
SB
specification.
This parameter is sampled, but not 100% tested.
For test conditions, see
AC Test Conditions
, Figures A and B.
t
CLZ
and t
CHZ
are specified with CL = 5 pF, as in Figure B. Transition is measured
±
500 mV from steady-state voltage.
This parameter is guaranteed, but not 100% tested.
WE
is high for read cycle.
CE
and
OE
are low for read cycle.
Address is valid prior to or coincident with
CE
transition low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
All write cycle timings are referenced from the last valid address to the first transitioning address.
t
AW
Address
CE
WE
D
OUT
t
CW
t
WP
t
DW
Data valid
t
DH
t
AH
t
WR
t
WZ
t
WC
t
AS
D
IN
168
Thevenin equivalent:
D
OUT
+1.728 V
255
C
13
480
D
OUT
GND
+5 V
Figure B: 5 V Output load
10%
90%
10%
90%
GND
+3.5 V
Figure A: Input pulse
2 ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS7C1025B-12JI | 5V 128K X 8 CMOS SRAM (Center power and ground) |
| AS7C1025B-12JIN | 5V 128K X 8 CMOS SRAM (Center power and ground) |
| AS7C1025B-12TJC | 5V 128K X 8 CMOS SRAM (Center power and ground) |
| AS7C1025B-12TJCN | 5V 128K X 8 CMOS SRAM (Center power and ground) |
| AS7C1025B-15TJCN | 5V 128K X 8 CMOS SRAM (Center power and ground) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS7C1025B-12JCNTR | 功能描述:靜態(tài)隨機(jī)存取存儲器 1M, 5V, 12ns FAST 128K x 8 Asynch 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C1025B-12JI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 128K X 8 CMOS SRAM (Center power and ground) |
| AS7C1025B-12JIN | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 128K X 8 CMOS SRAM (Center power and ground) |
| AS7C1025B-12TCN | 功能描述:靜態(tài)隨機(jī)存取存儲器 Fast Asynch 5V Cen Pw 128Kx8 12ns 1Mb RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C1025B-12TJC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 128K X 8 CMOS SRAM (Center power and ground) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。