參數(shù)資料
型號(hào)： AS7C1024B-20TJI
廠商： ALLIANCE SEMICONDUCTOR CORP
元件分類(lèi)： DRAM
英文描述： 5V 128K X 8 CMOS SRAM
中文描述： 128K X 8 STANDARD SRAM, 20 ns, PDSO32
封裝： 0.300 INCH, PLASTIC, SOJ-32
文件頁(yè)數(shù)： 6/9頁(yè)
文件大?。?/td> 111K
代理商： AS7C1024B-20TJI
AS7C1024B
3/26/04, v 1.2
Alliance Semiconductor
P. 6 of 9
Write waveform 2 (CE1 and CE2 controlled)
10,11,12
AC test conditions
Notes
1
2
3
4
5
6
7
8
9
10 N/A
11
12 CE1 and CE2 have identical timing.
13 C = 30 pF, except all high Z and low Z parameters where C = 5 pF.
During V
CC
power-up, a pull-up resistor to V
CC
on CE1 is required to meet I
SB
specification.
This parameter is sampled and not 100% tested.
For test conditions, see
AC Test Conditions
, Figures A and B.
t
CLZ
and t
CHZ
are specified with CL = 5pF, as in Figure C. Transition is measured ±500 mV from steady-state voltage.
This parameter is guaranteed, but not 100% tested.
WE is high for read cycle.
CE1 and OE are low and CE2 is high for read cycle.
Address valid prior to or coincident with CE1 transition Low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
All write cycle timings are referenced from the last valid address to the first transitioning address.
t
AW
Address
CE1
WE
D
OUT
t
CW1
, t
CW2
t
WP
t
DW
Data valid
t
DH
t
AH
t
WR
t
WZ
t
WC
t
AS
CE2
D
IN
– Output load: see Figure B.
– Input pulse level: GND to 3.5V. See Figure A.
– Input rise and fall times: 2 ns. See Figure A.
– Input and output timing reference levels: 1.5V.
168
+1.728V
Thevenin equivalent:
D
OUT
255
C
13
480
D
OUT
GND
+5V
Figure B: 5V Output load
10%
90%
10%
90%
GND
+3.5V
Figure A: Input pulse
2 ns
相關(guān)PDF資料
PDF描述
AS7C1024B-10TJC 128 x 64 pixel format, LED or EL Backlight available
AS7C1024B-20TJC 128 x 64 pixel format, LED or EL Backlight available
AS7C1024B-10TJCN 128 x 64 pixel format, LED or EL Backlight available
AS7C1024B-20TJCN 128 x 64 pixel format, LED or EL Backlight available
AS7C1024B-12TJCN 5V 128K X 8 CMOS SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AS7C1024B-20TJIN 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:5V 128K X 8 CMOS SRAM
AS7C1024B-20TJINTR 功能描述:IC SRAM 1MBIT 20NS 32SOJ 制造商:alliance memory, inc. 系列:- 零件狀態(tài):在售 存儲(chǔ)器類(lèi)型:易失 存儲(chǔ)器格式:SRAM 技術(shù):SRAM - 異步 存儲(chǔ)容量:1Mb （128K x 8） 寫(xiě)周期時(shí)間 - 字，頁(yè):20ns 訪問(wèn)時(shí)間:20ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:4.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C（TA） 標(biāo)準(zhǔn)包裝:1,000
AS7C1024C 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:5V 128K X 8 CMOS SRAM
AS7C1024C-12JIN 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M, 5V, 12ns FAST 128K x 8 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
AS7C1024C-12JINTR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M, 5V, 12ns FAST 128K x 8 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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