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參數(shù)資料
| 型號(hào)： | AS6UA25616 |
| 廠(chǎng)商： | Alliance Semiconductor Corporation |
| 英文描述： | 2.3V to 3.6V 256K×16 Intelliwatt low-power CMOS SRAM with one chip enable(2.3V 到 3.6V 256K×16 Intelliwatt 低功耗 CMOS 靜態(tài)RAM（帶單片使能）) |
| 中文描述： | 2.3V至3.6V的256K × 16 Intelliwatt低功耗CMOS SRAM的一個(gè)芯片使能（為2.3V到3.6V的256K × 16 Intelliwatt低功耗的CMOS靜態(tài)隨機(jī)存儲(chǔ)器（帶單片使能）） |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 190K |
| 代理商： | AS6UA25616 |
October 2000
Copyright 2000 Alliance Semiconductor. All rights reserved.
AS6UA25616
10/6/00
ALLIANCE SEMICONDUCTOR
1
2.3V to 3.6V 256K×16 Intelliwatt low-power CMOS SRAM with one chip enable
‘Features
AS6UA25616
Intelliwatt active power circuitry
Industrial and commercial temperature ranges available
Organization: 262,144 words x 16 bits
2.7V to 3.6V at 55 ns
2.3V to 2.7V at 70 ns
Low power consumption: ACTIVE
- 114 mW at 3.6V and 55 ns
- 68 mW at 2.7V and 70 ns
Low power consumption: STANDBY
- 72 μW max at 3.6V
- 41
μ
W max at 2.7V
1.2V data retention
Equal access and cycle times
Easy memory expansion with CS, OE inputs
Smallest footprint packages
- 48-ball FBGA
- 400-mil 44-pin TSOP II
ESD protection
≥
2000 volts
Latch-up current
≥
200 mA
Logic block diagram
256K × 16
Array
(4,194,304)
OE
LB
CS
WE
Column decoder
R
A0
A1
A2
A3
A4
A6
A7
A8
A12
A13
V
CC
V
SS
A
A
A
A
A
A
A
A
Control circuit
I/O1–I/O8
I/O9–I/O16
UB
I/O
buffer
Pin arrangement (top view)
48-CSP Ball-Grid-Array Package
1
2
3
LB
OE
A0
I/O9
UB
A3
I/O10 I/O11
A5
V
SS
I/O12
A17
V
CC
I/O13
NC
I/O15 I/O14
A14
I/O16
NC
A12
NC
A8
A9
4
5
6
A
B
C
D
E
F
G
H
A1
A4
A6
A7
A16
A15
A13
A10
A2
CS
I/O2
I/O4
I/O5
I/O6
WE
A11
NC
I/O1
I/O3
V
CC
V
SS
I/O7
I/O8
NC
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
I/O13
V
SS
V
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
A12
CS
I/O1
I/O2
I/O3
I/O4
V
CC
V
SS
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
44-pin 400-mil TSOP II
1
A4
LB
I/O16
I/O14
2
3
4
A3
A2
A0
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
42
40
43
A7
UB
A6
Selection guide
Product
AS6UA25616
V
CC
Range
Typ
2
(V)
3.0
Speed
(ns)
55
Power Dissipation
Min
(V)
2.7
Max
(V)
3.6
Operating (I
CC
)
Max (mA)
2
Standby (I
SB1
)
Max (
μ
A)
20
AS6UA25616
2.3
2.5
2.7
70
1
15
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS6UA25616-BC | 2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable |
| AS6UA25616-BI | 2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable |
| AS6UA25616-TC | 2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable |
| AS6UA25616-TI | 2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable |
| AS6UA25616 | 2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS6UA25616-BC | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable |
| AS6UA25616-BI | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable |
| AS6UA25616-TC | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable |
| AS6UA25616-TI | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable |
| AS6UA25617 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:1.65V to 3.6V 256K x 16 Intelliwatt low power CMOS SRAM with two chip enables |
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