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參數(shù)資料
| 型號(hào)： | AS5SS256K36ADQ-8.5/883C |
| 廠商： | AUSTIN SEMICONDUCTOR INC |
| 元件分類： | SRAM |
| 英文描述： | 256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM |
| 中文描述： | 256K X 36 STANDARD SRAM, 8.5 ns, PQFP100 |
| 封裝： | 14 X 20 MM, 1.40 MM HEIGHT, MS-026, TQFP-100 |
| 文件頁數(shù)： | 14/16頁 |
| 文件大小： | 391K |
| 代理商： | AS5SS256K36ADQ-8.5/883C |
SSRAM
AS5SS256K36 &
AS5SS256K36A
AS5SS256K36 &
AS5SS256K36A
Rev. 3.6 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
Storage Temperature (Plastics) ...........................-55
°C to +150°C
Storage Temperature (Ceramics) .........................-55
°C to +125°C
Short Circuit Output Current (per I/O)…............................100mA
Voltage on any Pin Relative to Vss........................-0.5V to +4.6 V
Max Junction Temperature**..............................................+150
°C
V
IN
(DQx) .........................................................-0.5V to V
DDQ +0.5V
V
IN
(inputs) ................................................... ....-0.5V to V
DD +0.5V
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
** Junction temperature depends upon package type, cycle
time, loading, ambient temperature and airflow, and humidity.
3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(-55oC to +125oC or -40oC to +85oC; V
DD, VDDQ = +3.3V +0.3V/-0.165V unless otherwise noted)
PARAMETER
CONDITION
SYMBOL
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
VIH
2.2
VCC +0.3
V
1, 2
Input Low (Logic 0) Voltage
VIL
-0.3
0.8
V
1, 2
Input Leakage Current
OV < VIN < Vcc
ILI
-2
2
μΑ
3
Output Leakage Current
Output(s) disabled, OV < VOUT < Vcc
ILO
-2
2
μΑ
Output High Voltage
IOH = -4.0 mA
VOH
2.4
--
V
1, 4
Output Low Voltage
IOL = 8.0 mA
VOL
---
0.4
V
1, 4
Supply Voltage
VDD
3.135
3.6
V
1
Isolated Output Buffer Supply
VDDQ
3.135
3.6
V
1, 5
NOTES:
1. All voltages referenced to Vss (GND).
2. Overshoot: V
IH < +4.6V for t<t
KC
/2 for I < 20mA
Undershoot: V
IL > -0.7V for t<t
KC
/2 for I < 20mA
Power-up: V
IH < +3.6V and VDD < 3.135V for t < 200ms
3. MODE and ZZ pins have internal pull-up resistors, and input leakage = +10
μA
4. The load used for V
OH, VOL testing is shown in Figure 2 for 3.3V I/O. AC load current is higher than the stated DC values.
AC I/O curves are available upon request.
5. V
DDQ should never exceed VDD. VDD and VDDQ can be connected together.
6. This parameter is sampled.
THERMAL RESISTANCE
DESCRIPTION
SYM
TYP
UNITS NOTES
Thermal Resistance
(Junction to Ambient)
1-layer
θJA
40
oC/W
6
Thermal Resistance
(Junction to Top of Case, Top)
θJC
9
oC/W
6
Thermal Resistance
(Junction to Pins, Bottom)
θJB
17
oC/W
6
CONDITIONS
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/JESD51.
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| AS5SS256K36DQ-8.5/883C | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM |
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