EEPROM
AS58C1001
Austin Semiconductor, Inc.
AS58C1001
Rev. 4.0 3/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
AC ELECTRICAL CHARACTERISTICS FOR BYTE ERASE AND BYTE
WRITE OPERATIONS
SYMBOL
t
AS
MIN
0
MAX
---
UNITS
ns
t
CS
7
0
---
ns
t
CW
8
250
---
ns
t
WP
t
AH
t
DS
t
DH
7
250
---
ns
150
---
ns
100
---
ns
10
---
ns
t
CH
t
OES
t
OEH
t
WC
t
BL
t
DB
t
RP
7
0
---
ns
0
---
ns
0
---
ns
10
---
ms
μ
s
100
---
120
---
ns
μ
s
100
---
t
RES
10
1
---
μ
s
Address Hold Time
Data Setup Time
Vcc to RES\ Setup Time
Time to Device Busy
RES\ to Write Setup Time
PARAMETER
Address Setup Time
Chip Enable to Write Setup Time
Byte Load Window
Data Hold Time
Chip Enable Hold Time
Out Enable to Write Setup Time
Write Pulse Width
Output Enable Hold Time
Write Cycle Time
AC TEST CONDITIONS
Input Pulse Levels............................................0V to 3V
Input Rise and Fall Times....................................<20ns
Input Timing Reference Level................................1.5V
Output Reference Level..........................................1.5V
Output Load................................................See Figure 1
Q
100pF
1 TTL GATE EQ.
Figure 1
OUTPUT LOAD EQUIVALENT
NOTES:
1. Relative to Vss
2. V
IN
min = -3.0V for pulse widths <50ns
3. V
IL
min = -1.0V for pulse widths <50ns
4. I
IL
on RES\ = 100ua MAX
5. t
is defined as the time at which E the output becomes and
open circuit and data is no longer driven.
6. Use this device in longer cycle than this value
7. WE\ controlled operation
8. CE\ controlled operation
9. RES\ pin V
is V
10. Reference only, not tested