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參數(shù)資料
| 型號(hào)： | AS4LC4M4E0-60TI |
| 英文描述： | x4 EDO Page Mode DRAM |
| 中文描述： | x4 EDO公司頁面模式的DRAM |
| 文件頁數(shù)： | 2/15頁 |
| 文件大小： | 265K |
| 代理商： | AS4LC4M4E0-60TI |
AS4LC4M4E0
AS4LC4M4E1
4/11/01; V1.1
Alliance Semiconductor
P. 2 of 15
Functional description
The AS4LC4M4E0 and AS4LC4M4E1 are high performance 16-megabit CMOS Dynamic Random Access Memories (DRAM) organized as
4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high
speed, extremely low power and wide operating margins at component and system levels. The Alliance 16Mb DRAM family is optimized for
use as main memory in PC, workstation, router and switch applications.
These products feature a high speed page mode operation where read and write operations within a single row (or page) can be executed at
very high speed by toggling column addresses within that row. Row and column addresses are alternately latched into input buffers using the
falling edge of
RAS
and
CAS
inputs respectively. Also,
RAS
is used to make the column address latch transparent, enabling application of
column addresses prior to
CAS
assertion.
Extended data out (EDO) read mode enables 60MHz operation using 60ns devices. In contrast to 'fast page mode' devices, data remains active
on outputs after
CAS
is de-asserted high, giving system logic more time to latch the data. Use
OE
and
WE
to control output impedance and
prevent bus contention during read-modify-write and shared bus applications. Outputs also go to high impedance at the last occurrance of
RAS
and
CAS
going high.
Refresh on the 4096 address combinations of A0 to A11 must be performed every 64 ms using:
RAS
-only refresh:
RAS
is asserted while
CAS
is held high. Each of the 4096 rows must be strobed. Outputs remain high impedence.
Hidden refresh:
CAS
is held low while
RAS
is toggled. Refresh address is generated internally. Outputs remain low impedence with
previous valid data.
CAS
-before-
RAS
refresh (CBR):
CAS
is asserted prior to
RAS
. Refresh address is generated internally.
Outputs are high-impedence (
OE
and
WE
are don't care).
Normal read or write cycles refresh the row being accessed.
Self-refresh cycles
Refresh on the 2048 address combinations of A0 to A10 must be performed every 32 ms using:
RAS
-only refresh:
RAS
is asserted while
CAS
is held high. Each of the 2048 rows must be strobed. Outputs remain high impedence.
Hidden refresh:
CAS
is held low while
RAS
is toggled. Refresh address is generated internally. Outputs remain low impedence with
previous valid data.
CAS
-before-
RAS
refresh (CBR):
CAS
is asserted prior to
RAS
. Refresh address is generated internally.
Outputs are high-impedence (
OE
and
WE
are don't care).
Normal read or write cycles refresh the row being accessed.
Self-refresh cycles
The AS4LC4M4E0 and AS4LC4M4E1 are available in the standard 24/26-pin plastic SOJ and 24/26-pin plastic TSOP packages. The
AS4LC4M4E0 and AS4LC4M4E1 operate with a single power supply of 3V ± 0.3V All provide TTL compatible inputs and outputs.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS4LC4M4E1 | 4M x 4 CMOS DRAM (EDO) Family |
| AS4LC4M4E1-50JC | x4 EDO Page Mode DRAM |
| AS4LC4M4E1-50JI | x4 EDO Page Mode DRAM |
| AS4LC4M4E1-50TC | x4 EDO Page Mode DRAM |
| AS4LC4M4E1-50TI | x4 EDO Page Mode DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS4LC4M4E0-70JC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| AS4LC4M4E1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M x 4 CMOS DRAM (EDO) Family |
| AS4LC4M4E1-50JC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| AS4LC4M4E1-50JI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| AS4LC4M4E1-50TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
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