參數(shù)資料
型號: AS4LC2M8S0-15TC
英文描述: x8 SDRAM
中文描述: x8 SDRAM內(nèi)存
文件頁數(shù): 6/15頁
文件大小: 265K
代理商: AS4LC2M8S0-15TC
AS4LC4M4E0
AS4LC4M4E1
4/11/01; V1.1
Alliance Semiconductor
P. 6 of 15
Write cycle
Read-modify-write cycle
Refresh cycle
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
t
WCS
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
Write command setup time
0
0
ns
11
Write command hold time
10
10
ns
11
Write command pulse width
10
10
ns
Write command to
RAS
lead time
10
10
ns
Write command to
CAS
lead time
8
10
ns
Data-in setup time
0
0
ns
12
Data-in hold time
8
10
ns
12
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
t
RWC
t
RWD
t
CWD
t
AWD
Read-write cycle time
113
135
ns
RAS
to
WE
delay time
67
77
ns
11
CAS
to
WE
delay time
32
35
ns
11
Column address to
WE
delay time
42
47
ns
11
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
t
CSR
t
CHR
t
RPC
CAS
setup time (
CAS
-before-
RAS
)
5
5
ns
3
CAS
hold time (
CAS
-before-RAS)
8
10
ns
3
RAS precharge to
CAS
hold time
0
0
ns
t
CPT
CAS
precharge time
(CBR counter test)
10
10
ns
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