參數(shù)資料
型號(hào): AS4LC256K16EO
英文描述: 3.3V 256K x 16 CMOS DRAM (EDO)
中文描述: 3.3 256K × 16的CMOS的DRAM(江戶)
文件頁數(shù): 7/15頁
文件大小: 265K
代理商: AS4LC256K16EO
AS4LC4M4E0
AS4LC4M4E1
4/11/01; V1.1
Alliance Semiconductor
P. 7 of 15
Hyper page mode cycle
Output enable
Self-refresh cycle
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
t
CPWD
t
CPA
t
RASP
t
DOH
t
REZ
t
WEZ
t
OEZ
t
HPC
t
HPRWC
t
RHCP
CAS
precharge to
WE
delay time
45
52
ns
Access time from
CAS
precharge
28
35
ns
13
RAS
pulse width
50
100K
60
100K
ns
Previous data hold time from
CAS
5
5
ns
Output buffer turn off delay from
RAS
0
13
0
15
ns
Output buffer turn off delay from
WE
0
13
0
15
ns
Output buffer turn off delay from
OE
0
13
0
15
ns
Hyper page mode cycle time
20
25
ns
Hyper page mode RMW cycle
47
56
ns
RAS
hold time from
CAS
30
35
ns
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
t
CLZ
t
ROH
t
OEA
t
OED
t
OEZ
t
OEH
t
OLZ
t
OFF
CAS
to output in Low Z
0
0
ns
8
RAS
hold time referenced to
OE
8
10
ns
OE
access time
13
15
ns
OE
to data delay
13
15
ns
Output buffer turnoff delay from
OE
0
13
0
15
ns
8
OE
command hold time
10
10
ns
OE
to output in Low Z
0
0
ns
Output buffer turn-off time
0
13
0
15
ns
8,10
Std
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
t
RASS
RAS
pulse width
(CBR self refresh)
100
100
μs
t
RPS
RAS
precharge time
(CBR self refresh)
90
105
ns
t
CHS
CAS
hold time
(CBR self refresh)
8
10
ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AS4LC256K16EO-35 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)
AS4LC256K16EO-35TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)
AS4LC256K16EO-45TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)
AS4LC256K16EO-60JC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)
AS4LC256K16EO-60TC 制造商:ALLIANCE 功能描述: 制造商:Alliance Memory Inc 功能描述: