參數(shù)資料
型號: AS4LC256K16E0-60JC
廠商: ALLIANCE SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 256K X 16 EDO DRAM, 60 ns, PDSO40
封裝: 0.400 INCH, PLASTIC, SOJ-40
文件頁數(shù): 1/24頁
文件大?。?/td> 660K
代理商: AS4LC256K16E0-60JC
Copyright Alliance Semiconductor. All rights reserved.
AS4LC256K16EO
2/25/02; V.1.2
Alliance Semiconductor
P. 1 of 24
3.3V 256K X 16 CMOS DRAM (EDO)
Features
Organization: 262,144 words × 16 bits
High speed
- 45/50/60 ns RAS access time
- 10/12/15/20 ns column address access time
- 7/10/10 ns CAS access time
Low power consumption
- Active: 280 mW max (AS4LC256K16EO-45)
- Standby: 2.8 mW max, CMOS I/O (AS4LC256K16EO-45)
EDO page mode
5V I/O tolerant
512 refresh cycles, 8 ms refresh interval
-RAS-only or CAS-before-RAS refresh or self refresh
Read-modify-write
LVTTL-compatible, three-state I/O
JEDEC standard packages
-400 mil, 40-pin SOJ
- 400 mil, 40/44-pin TSOP 2
3.3V power supply
Latch-up current > 200 mA
Pin arrangement
*1'
,2
*1'
,2
62-
1&
/&$6
8&$6
2(
$
*1'
9FF
,2
9FF
,2
1&
:(
5$6
1&
$
9FF
9&&
,2
9&&
,2
1&
:(
5$6
1&
$
9&&
*1'
,2
*1'
,2
1&
/&$6
8&$6
2(
$
*1'
7623
A
S4
L
C256
K1
6EO
A
S4
L
C256
K1
6EO
Pin designation
Pin(s)
Description
A0 to A8
Address inputs
RAS
Row address strobe
I/O0 to I/O15
Input/output
OE
Output enable
UCAS
Column address strobe, upper byte
LCAS
Column address strobe, lower byte
WE
Read/write control
VCC
Power (3.3V
± 0.3V)
GND
Ground
6HOHFWLRQ JXLGH
Symbol
-45
-50
-60
Unit
Maximum RAS access time
tRAC
45
50
60
ns
Maximum column address access time
tCAA
20
25
ns
Maximum CAS access time
tCAC
10
ns
Maximum output enable (OE) access time
tOEA
10
ns
Minimum read or write cycle time
tRC
80
100
ns
Minimum EDO page mode cycle time
tPC
17
30
ns
Maximum operating current
ICC1
60
50
mA
Maximum CMOS standby current
ICC2
200
A
相關PDF資料
PDF描述
AS5LC1008DJ-12/XT 128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout
AS5LC1008DJ-15/IT 128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout
AS5LC1008DJ-15/XT High-Speed CMOS SRAM with 3.3V Revolutionary Pinout
AS5LC1008DJ-20/IT 128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout
AS5LC1008DJ-20/XT 128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout
相關代理商/技術參數(shù)
參數(shù)描述
AS4LC256K16E0-60TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 EDO Page Mode DRAM
AS4LC256K16EO 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)
AS4LC256K16EO-35 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)
AS4LC256K16EO-35TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)
AS4LC256K16EO-45TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)