參數(shù)資料
型號: AS4LC256K16E0-45JC
英文描述: x16 EDO Page Mode DRAM
中文描述: x16 EDO公司頁面模式的DRAM
文件頁數(shù): 7/15頁
文件大?。?/td> 265K
代理商: AS4LC256K16E0-45JC
AS4LC4M4E0
AS4LC4M4E1
4/11/01; V1.1
Alliance Semiconductor
P. 7 of 15
Hyper page mode cycle
Output enable
Self-refresh cycle
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
t
CPWD
t
CPA
t
RASP
t
DOH
t
REZ
t
WEZ
t
OEZ
t
HPC
t
HPRWC
t
RHCP
CAS
precharge to
WE
delay time
45
52
ns
Access time from
CAS
precharge
28
35
ns
13
RAS
pulse width
50
100K
60
100K
ns
Previous data hold time from
CAS
5
5
ns
Output buffer turn off delay from
RAS
0
13
0
15
ns
Output buffer turn off delay from
WE
0
13
0
15
ns
Output buffer turn off delay from
OE
0
13
0
15
ns
Hyper page mode cycle time
20
25
ns
Hyper page mode RMW cycle
47
56
ns
RAS
hold time from
CAS
30
35
ns
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
t
CLZ
t
ROH
t
OEA
t
OED
t
OEZ
t
OEH
t
OLZ
t
OFF
CAS
to output in Low Z
0
0
ns
8
RAS
hold time referenced to
OE
8
10
ns
OE
access time
13
15
ns
OE
to data delay
13
15
ns
Output buffer turnoff delay from
OE
0
13
0
15
ns
8
OE
command hold time
10
10
ns
OE
to output in Low Z
0
0
ns
Output buffer turn-off time
0
13
0
15
ns
8,10
Std
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
t
RASS
RAS
pulse width
(CBR self refresh)
100
100
μs
t
RPS
RAS
precharge time
(CBR self refresh)
90
105
ns
t
CHS
CAS
hold time
(CBR self refresh)
8
10
ns
相關(guān)PDF資料
PDF描述
AS4LC256K16E0-45TC x16 EDO Page Mode DRAM
AS4LC256K16E0-60JC x16 EDO Page Mode DRAM
AS4LC256K16E0-60TC x16 EDO Page Mode DRAM
AS4LC256K16EO 3.3V 256K x 16 CMOS DRAM (EDO)
AS4LC256K32S0-100PQ Synchronous Graphics RAM (SGRAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AS4LC256K16E0-45TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 EDO Page Mode DRAM
AS4LC256K16E0-60JC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 EDO Page Mode DRAM
AS4LC256K16E0-60TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 EDO Page Mode DRAM
AS4LC256K16EO 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)
AS4LC256K16EO-35 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)