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參數(shù)資料
| 型號： | AS4C4M4E1-60JC |
| 英文描述： | x4 EDO Page Mode DRAM |
| 中文描述： | x4 EDO公司頁面模式的DRAM |
| 文件頁數(shù)： | 3/19頁 |
| 文件大?。?/td> | 986K |
| 代理商： | AS4C4M4E1-60JC |
16 Me
g FPM DRAM
AS4C4M4
Austin Semiconductor, Inc.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
AS4C4M4
Rev. 1.0 5/03
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55
o
C < T
A
< +125
o
C & -40
o
C < T
A
< +85
o
C ; Vcc = 5V +10%)
PARAMETER
SYMBOL
MIN
MAX
UNITS
Input Leakage Current (any input 0<V
IN
<V
IN
+0.5V,
all other input pins not under test = 0 Volt)
Output Leakage Current
(Data out is disabled, 0V<V
OUT
<V
CC
)
I
I(L)
-5
5
uA
I
O(L)
-5
5
uA
Output High Voltage (I
OH
= -5mA)
V
OH
2.4
---
V
Output Low Voltage (I
OL
= 4.2mA)
V
OL
---
0.4
V
-60
-70
I
CC1
*
Operating Current (RAS\ and CAS\, Address cycling @ t
RC
= MIN),
Power = Don't Care
110
100
mA
I
CC2
Standby Current (RAS\ = CAS\ = W\ = V
IH
)
Power = Normal L
3
3
mA
I
CC3
*
RAS\-only Refresh Current (CAS\ = V
IH
, RAS\, Address cycling @
t
RC
= MIN), Power = Don't Care
110
100
mA
I
CC4
*
Fast Page Mode Current (RAS\ = V
IL
, CAS\, Address cycling @
t
PC
= MIN), Power = Don't Care
Standby Current (RAS\ = CAS\ = W\ = Vcc - 0.2V)
Power = Normal L
CAS\-BEFORE-RAS\ Refresh Current (RAS\ and CAS\ cycling @
t
RC
= MIN), Power = Don't Care
90
80
mA
I
CC5
2
2
mA
I
CC6
*
110
100
mA
I
CC7
Battery back-up current, Average power supply current, Battery back-
up mode, Input high voltage (V
IH
) = V
CC
- 0.2V, Input low voltage
(V
IL
) = 0.2V, CAS\ = 0.2V, DQ = Don't care, t
RC
= 62.5us (2K/L-ver),
t
RAS
= t
RAS
min ~ 300ns
1
1
mA
I
CCS
Self Refresh Current, RAS\ = CAS\ = 0.2V, W\ = OE\ = A0 ~ A11 =
V
CC
- 0.2V or 0.2V, DQ0 ~ DQ3 = V
CC
- 0.2V, 0.2V or Open
1
1
MAX
SYMBOL
PARAMETERS
UNITS
NOTES:
*I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open. I
CC
is specified as an
average current. In I
CC1
, I
CC3
, and I
CC6
address can be changed maximum once while RAS\ = V
IL
. In I
CC4
, address can be changed maximum once within one
fast page mode cycle time, t
PC
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS4C4M4E1-60JI | x4 EDO Page Mode DRAM |
| AS4C4M4E1-60TC | x4 EDO Page Mode DRAM |
| AS4C4M4E1-60TI | x4 EDO Page Mode DRAM |
| AS4C4M4E1Q | 4M x 4 CMOS QuadCAS DRAM (EDO) family |
| AS4C4M4EOQ | Thick Film Chip Resistor - RMC 1 3.9 5% R |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS4C4M4E1-60JI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| AS4C4M4E1-60TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| AS4C4M4E1-60TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| AS4C4M4E1Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M x 4 CMOS QuadCAS DRAM (EDO) family |
| AS4C4M4EOQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M x 4 CMOS QuadCAS DRAM (EDO) family |
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