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參數(shù)資料
| 型號： | AS4C1M16E5-50JC |
| 英文描述： | DRAM|EDO|1MX16|CMOS|SOJ|42PIN|PLASTIC |
| 中文描述： | 內(nèi)存| EDO公司| 1MX16 |的CMOS | SOJ | 42PIN |塑料 |
| 文件頁數(shù)： | 8/22頁 |
| 文件大?。?/td> | 617K |
| 代理商： | AS4C1M16E5-50JC |
AS4C1M16E5
4/11/01; v.1.0
Alliance Semiconductor
P.
8 of 22
Notes
1
2
3
4
5
6
Write cycles may be byte write cycles (either LCAS or UCAS active).
Read cycles may be byte read cycles (either LCAS or UCAS active).
One CAS must be active (either LCAS or UCAS).
I
CC1
, I
CC3
, I
CC4
, and I
CC6
are dependent on frequency.
I
CC1
and I
CC4
depend on output loading. Specified values are obtained with the output open.
An initial pause of 200 μs is required after power-up followed by any 8 RAS cycles before proper device operation is achieved. In the case of an internal
refresh counter, a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required. 8 initialization cycles are required after
extended periods of bias without clocks (greater than 8 ms).
AC Characteristics assume t
T
= 2 ns. All AC parameters are measured with a load as described in
AC test conditions
below.
V
IH
(min) and V
IL
(max) are reference levels for measuring timing of input signals. Transition times are measured between V
IH
and V
IL
.
Operation within the t
RCD
(max) limit insures that t
RAC
(max) can be met. t
RCD
(max) is specified as a reference point only. If t
RCD
is greater than the
specified t
RCD
(max) limit, then access time is controlled exclusively by t
CAC
.
10 Operation within the t
RAD
(max) limit insures that t
RAC
(max) can be met. t
RAD
(max) is specified as a reference point only. If t
RAD
is greater than the
specified t
RAD
(max) limit, then access time is controlled exclusively by t
AA
.
11 Assumes three state test load (5 pF and a 380
Thevenin equivalent).
12 Either t
RCH
or t
RRH
must be satisfied for a read cycle.
13 t
OFF
(max) defines the time at which the output achieves the open circuit condition; it is not referenced to output voltage levels. t
OFF
is referenced from
rising edge of RAS or CAS, whichever occurs last.
14 t
WCS
, t
WCH
, t
RWD
, t
CWD
and t
AWD
are not restrictive operating parameters. They are included in the datasheet as electrical characteristics only.
If t
WS
≥
t
WS
(min) and t
WH
≥
t
WH
(min), the cycle is an early write cycle and data out pins will remain open circuit, high impedance, throughout the
cycle. If t
RWD
≥
t
RWD
(min), t
CWD
≥
t
CWD
(min) and t
AWD
≥
t
AWD
(min), the cycle is a read-write cycle and the data out will contain data read from the
selected cell. If neither of the above conditions is satisfied, the condition of the data out at access time is indeterminate.
15 These parameters are referenced to CAS leading edge in early write cycles and to WE leading edge in read-write cycles.
16 Access time is determined by the longest of t
CAA
or t
CAC
or t
CPA
17 t
ASC
≥
t
CP
to achieve t
PC
(min) and t
CPA
(max) values.
18 These parameters are sampled and not 100% tested.
19 These characteristics apply to AS4C1M16E5 5V devices.
7
8
9
AC test conditions
- Access times are measured with output reference levels of
V
OH
= 2.4V and V
OL
= 0.4V,
V
IH
= 2.4V and V
IL
= 0.8V
- Input rise and fall times: 2 ns
Key to switching waveforms
Rising input
100 pF*
R2 = 295
R1 = 828
D
out
GND
+5V
Figure A: Equivalent output load
(AS4C1M16E5)
*including scope
and jig capacitance
50 pF*
R2 = 295
R1 = 828
D
out
GND
+3.3V
Figure B: Equivalent output load
(AS4LC1M16E5)
Undefined output/don’t care
Falling input
相關PDF資料 |
PDF描述 |
|---|---|
| AS4C1M16E5-50JI | x16 EDO Page Mode DRAM |
| AS4C1M16E5-50TC | DRAM|EDO|1MX16|CMOS|TSOP|50PIN|PLASTIC |
| AS4C256K16F0-35TI | x16 Fast Page Mode DRAM |
| AS4C256K16F0-50JC | x16 Fast Page Mode DRAM |
| AS4C256K16F0-50JI | x16 Fast Page Mode DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AS4C1M16E5-50JI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 1M×16 CMOS DRAM (EDO) |
| AS4C1M16E5-50TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DRAM|EDO|1MX16|CMOS|TSOP|50PIN|PLASTIC |
| AS4C1M16E5-50TI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 1M×16 CMOS DRAM (EDO) |
| AS4C1M16E560JC | 制造商:Alliance Memory Inc 功能描述: |
| AS4C1M16E5-60JC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 1M×16 CMOS DRAM (EDO) |
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