參數(shù)資料
型號(hào): AS29LV160
廠商: Alliance Semiconductor Corporation
英文描述: 3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM
中文描述: 3W 200萬(wàn)× 8 / 1米× 16 -閃存EEPROM的CMOS
文件頁(yè)數(shù): 13/29頁(yè)
文件大?。?/td> 561K
代理商: AS29LV160
8/30/01;
V.0.9.5
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P. 13 of 29
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Addresses
(Word Mode)
40h
41h
42h
43h
44h
45h
46h
47h
48h
49h
4Ah
4Bh
4Ch
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
62h
64h
66h
68h
6Ah
6Ch
6Eh
70h
72h
74h
76h
78h
0001h
0000h
0020h
0000h
0000h
0000h
0080h
0000h
001Eh
0000h
0000h
0001h
Erase block region 2 information
Erase block region 3 information
Erase block region 4 information
Addresses
(Byte Mode)
80h
82h
84h
86h
88h
8Ah
8Ch
8Eh
90h
92h
94h
96h
98h
Data
0050h
0052h
0049h
0031h
0030h
0000h
0002h
0001h
0001h
0004h
0000h
0000h
0000h
Description
Query-unique ASCII string (PRI)
Major version number, ASCII
Minor version number, ASCII
Address sensitive unlock, 0 = required, 1 = not required
Erase suspend, 0 = not supported, 1 = to read only, 2 = to read and write
Sector protect, 0 = not supported, X = number of sectors in per group
Sector temporary unprotect, 00 = not supported, 01 = supported
Sector protect/unprotect scheme
Simultaneous operation, 00 = not supported, 01 = supported
Burst mode type, 00 = not supported , 01 = supported
Page mode type, 00 = not supported, 01 = 4 word page, 02 = 8 word page
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
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