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參數(shù)資料
| 型號： | AS29F200T-70SI |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| 中文描述： | 128K X 16 FLASH 5V PROM, 70 ns, PDSO44 |
| 封裝： | 0.600 INCH, SO-44 |
| 文件頁數(shù)： | 5/20頁 |
| 文件大?。?/td> | 375K |
| 代理商： | AS29F200T-70SI |
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Toggles with OE or CE only for erasing or erase suspended sector addresses.
Toggles only if DQ5 = 1 and address applied is within sector that exceeded timing limits.
DQ8–DQ15 = Don’t care in ×16 mode.
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Item
Status
Auto programming (byte/word)
Program/erase in auto erase
Read erasing sector
Read non-erasing
sector
Program in erase
suspend
Auto programming (byte/word)
Program/erase in auto erase
Program in erase suspend
DQ7
DQ7
0
1
DQ6
Toggle
Toggle
No toggle
DQ5
0
0
0
DQ3
0
1
0
DQ2
No toggle
Toggle
Toggle
RY/BY
0
0
1
In progress
Erase
suspend
mode
Data
Data
Data
Data
Data
1
DQ7
Toggle
0
0
Toggle
0
Exceeded time limits
DQ7
0
DQ7
Toggle
Toggle
Toggle
1
1
1
NA
1
NA
No toggle
Toggle
No toggle
1
1
1
Description
Initiate read or reset operations by writing the Read/Reset command sequence into the command
register. This allows the microprocessor to retrieve data from the memory. Device remains in read
mode until command register contents are altered.
Reset/Read
Device automatically powers up in read/reset state. This feature allows only reads, therefore
ensuring no spurious memory content alterations during power up.
AS29F200 provides manufacturer and device codes in two ways. External PROM programmers
typically access the device codes by driving +12V on A9. AS29F200 also contains an ID read
command to read the device code with only +5V, since multiplexing +12V on address lines is
generally undesirable.
ID Read
Initiate device ID read by writing the ID Read command sequence into the command register.
Follow with a read sequence from address XX00h to return MFG code. Follow ID read command
sequence with a read sequence from address XX01h to return device code.
To verify write protect status on sectors, read address XX02h. Sector addresses A16–A12 produce a
1 on DQ0 for protected sector and a 0 for unprotected sector.
Exit from ID read mode with Read/Reset command sequence.
Holding RESET low for 500 ns resets the device, terminating any operation in progress; data
handled in the operation is corrupted. The internal state machine resets 20 μs after RESET is driven
low. RY/BY remains low until the RESET operation is completed. After RESET is set high, there is a
delay of 1.5 μs for the device to permit read operations.
Hardware Reset
相關PDF資料 |
PDF描述 |
|---|---|
| AS29F200T-70TC | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200T-70TI | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200T-90SC | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200T-90SI | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200T-90TC | 5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AS29F200T-70TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200T-70TI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200T-90SC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200T-90SI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
| AS29F200T-90TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM |
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