參數(shù)資料
型號(hào)： AS29F200T-55TI
廠商： ALLIANCE SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 5V 256K x 8/128K x 8 CMOS FLASH EEPROM
中文描述： 128K X 16 FLASH 5V PROM, 55 ns, PDSO48
封裝： 12 X 20 MM, TSOP-48
文件頁(yè)數(shù)： 8/20頁(yè)
文件大?。?/td> 375K
代理商： AS29F200T-55TI
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1
2
3
4
5
6
Bus operations defined in "Mode definitions," on page 4.
Reading data from or programming data to non-erasing sectors allowed in Erase Suspend mode.
Address bit A15 = X = Don’t care for all address commands except Program Address and Sector Address.
Address bit A16 = X = Don’t care for all address commands except Program Address and Sector Address.
System should generate address patterns: ×16 mode - 5555h or 2AAAh to address A0–A14; ×8 mode - AAAAh or 5555h to address A-1–A14.
A
0
= 0, A
1
= 1, A
6
= 0 for sector protect verify; sector selected on A16-A12.
Sector erase timer
(DQ3)
Checks whether sector erase timer window is open. If DQ3 = 1, erase is in progress; no commands
will be accepted. If DQ3 = 0, the device will accept sector erase commands. Check DQ3 before and
after each sector erase command to verify that the command was accepted.
During sector erase, DQ2 toggles with OE or CE only during an attempt to read a sector being
erased. During chip erase, DQ2 toggles with OE or CE for all addresses. If DQ5 = 1, DQ2 toggles
only at sector addresses where failure occurred, and will not toggle at other sector addresses. Use
DQ2 in conjunction with DQ6 to determine whether device is in auto erase or erase suspend
mode.
Toggle bit 2 (DQ2)
Commandsequence
Requred
buscycles
1st buswritecycle
Address
2ndbus
writecycle
Address
3rdbus
writecycle
Address
4thbus
read/writecycle
Address
5thbus
writecycle
Address Data
6thbus
writecycle
Address
Data
Data
Data
Data
Data
Rese/Read
1
XXXXh
F0h
Read
Address
ReadData
Rese/Read
×16
4
5555h
AAh
2AAAh
55h
5555h
F0h
Read
Address
Read
Data
×8
AAAAh
5555h
AAAAh
Autoseect
ID Read
×16
4
5555h
AAh
2AAAh
55h
5555h
90h
01h
2251h(T)
2257h (B)
×8
AAAAh
5555h
AAAAh
02h
51h (T)
57h (B)
×16/×8
00h
MFR code
52h
×16
XXX02h
01 = protected
00 = unprotected
×8
XXX04h
Program
×16
4
5555h
AAh
2AAAh
55h
5555h
A0h
Program
Address
Program
Data
×8
AAAAh
5555h
AAAAh
ChipErase
×16
6
5555h
AAh
2AAAh
55h
5555h
80h
5555h
AAh
2AAAh
55h
5555h
10h
×8
AAAAh
5555h
AAAAh
AAAAh
5555h
AAAAh
Sector Erase
×16
6
5555h
AAh
2AAAh
55h
5555h
80h
5555h
AAh
2AAAh
55h
Sector
Address
30h
×8
AAAAh
5555h
AAAAh
AAAAh
5555h
Sector EraseSuspend
1
XXXXh
B0h
Sector EraseResume
1
XXXXh
30h
相關(guān)PDF資料
PDF描述
AS29F200T-70SC 5V 256K x 8/128K x 8 CMOS FLASH EEPROM
AS29F200T-70SI 5V 256K x 8/128K x 8 CMOS FLASH EEPROM
AS29F200T-70TC 5V 256K x 8/128K x 8 CMOS FLASH EEPROM
AS29F200T-70TI 5V 256K x 8/128K x 8 CMOS FLASH EEPROM
AS29F200T-90SC 5V 256K x 8/128K x 8 CMOS FLASH EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AS29F200T-70SC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM
AS29F200T-70SI 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM
AS29F200T-70TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM
AS29F200T-70TI 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM
AS29F200T-90SC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 256K x 8/128K x 8 CMOS FLASH EEPROM
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