參數(shù)資料
型號: AS29F040-90TI
廠商: ALLIANCE SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 5V 512K x 8 CMOS FLASH EEPROM
中文描述: 512K X 8 FLASH 5V PROM, 90 ns, PDSO32
封裝: 8 X 20 MM, TSOP-32
文件頁數(shù): 8/18頁
文件大?。?/td> 341K
代理商: AS29F040-90TI
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*
The system software should check the status of DQ3 prior to and
following each subsequent sector erase command to ensure command
completion. The device may not have accepted the command if DQ3 is
high on second status check.
Writeprogramcommandsequence
(seebeow)
DATA pol deviceprogram
Programmngcompeed
5555h/AAh
2AAAh/55h
5555h/A0h
Programaddress/programdata
Programcommandsequence
Erasecompee
DATA poling or togglebt
successfuly compeed
Writeeasecommandsequence
(seebeow)
5555h/AAh
2AAAh/55h
5555h/80h
Chperasecommandsequence
5555h/AAh
2AAAh/55h
5555h/10h
Sector easecommandsequence
Sector address/30h
Sector address/30h
Sector address/30h
Optional mutipe
sector erasecommands
*
5555h/AAh
2AAAh/55h
5555h/80h
5555h/AAh
2AAAh/55h
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AS29F040CW-120/883C 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY
AS29F040CW-120/IT 制造商:Micross Components 功能描述:FLASH, 4MB - Rail/Tube
AS29F040CW-120/Q 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY
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