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參數(shù)資料
| 型號(hào)： | AS29F040-90LI |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 5V 512K x 8 CMOS FLASH EEPROM |
| 中文描述： | 512K X 8 FLASH 5V PROM, 90 ns, PQCC32 |
| 封裝： | 0.550 X 0.450 INCH, 0.110 INCH HEIGHT, 0.050 INCH PITCH, PLASTIC, MS-016AE, LCC-32 |
| 文件頁(yè)數(shù)： | 8/18頁(yè) |
| 文件大?。?/td> | 341K |
| 代理商： | AS29F040-90LI |
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*
The system software should check the status of DQ3 prior to and
following each subsequent sector erase command to ensure command
completion. The device may not have accepted the command if DQ3 is
high on second status check.
Writeprogramcommandsequence
(seebeow)
DATA pol deviceprogram
Programmngcompeed
5555h/AAh
2AAAh/55h
5555h/A0h
Programaddress/programdata
Programcommandsequence
Erasecompee
DATA poling or togglebt
successfuly compeed
Writeeasecommandsequence
(seebeow)
5555h/AAh
2AAAh/55h
5555h/80h
Chperasecommandsequence
5555h/AAh
2AAAh/55h
5555h/10h
Sector easecommandsequence
Sector address/30h
Sector address/30h
Sector address/30h
Optional mutipe
sector erasecommands
*
5555h/AAh
2AAAh/55h
5555h/80h
5555h/AAh
2AAAh/55h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS29F040-90TC | 5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-90TI | 5V 512K x 8 CMOS FLASH EEPROM |
| AS29LV160 | 3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM |
| AS29LV160B | 3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM |
| AS29LV160T | 3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS29F040-90TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-90TI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040CW-120/883C | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY |
| AS29F040CW-120/IT | 制造商:Micross Components 功能描述:FLASH, 4MB - Rail/Tube |
| AS29F040CW-120/Q | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY |
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