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參數(shù)資料
| 型號： | AS29F040-70TI |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 5V 512K x 8 CMOS FLASH EEPROM |
| 中文描述： | 512K X 8 FLASH 5V PROM, 70 ns, PDSO32 |
| 封裝： | 8 X 20 MM, TSOP-32 |
| 文件頁數(shù)： | 11/18頁 |
| 文件大小： | 341K |
| 代理商： | AS29F040-70TI |
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Parameter
Input load current
A9 Input load current
Output leakage current
Output short circuit current
*
Active current, read @ 6MHz
Active current, program/erase
**
Standby current (TTL)
9
&&
#
#813
±
318
9
*
Not more than one output tested simultaneously. Duration of the short circuit must not be >1 second.
OUT
= 0.5V was selected to avoid test problems
caused by tester ground degradation. (This parameter is sampled and not 100% tested, but guaranteed by characterization.)
The I
CC
current listed includes both the DC operating current and the frequency dependent component (@ 6 MHz). The frequency component typically is
less than 2 mA/MHz with
OE
at V
IH
.
**
I
CC
active while program or erase operations are in progress.
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#
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#
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#
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#
RYHUVKRRW
#
ZDYHIRUP
Symbol
I
LI
I
LIT
I
LO
I
OS
I
CC
I
CC2
I
SB1
Test conditions
V
IN
= V
SS
to V
CC
, V
CC
= V
CC MAX
V
CC
= V
CC MAX
, A9 = 12.5V
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC MAX
V
OUT
= 0.5V
CE = V
IL
, OE = V
IH
CE = V
IL
, OE = V
IH
CE = OE = V
IH
, V
CC
= V
CC MAX
CE = V
CC
+ 0.5V OE = V
IH
,
V
CC
= V
CC MAX
Min
-
Max
±1
90
±1
200
30
60
1.0
Unit
μ
A
μA
μ
A
mA
mA
mA
mA
-
-
-
-
-
Standby current (CMOS)
I
SB2
-
400
μA
Input low voltage
Input high voltage
Output low voltage
V
IL
V
IH
V
OL
V
OH1
V
OH2
V
LKO
V
ID
-0.5
2.0
-
2.4
V
CC
- 0.4
2.8
11.5
0.8
V
CC
+ 0.5
0.45
-
-
4.2
12.5
V
V
V
V
V
V
V
I
OL
= 12mA, V
CC
= V
CC MIN
I
OH
= -2.5 mA, V
CC
= V
CC MIN
I
OH
= -100 μA, V
CC
= V
CC MIN
Output high voltage
Low V
CC
lock out voltage
Input HV select voltage
20 ns
20 ns
20 ns
-2.0V
-0.5V
+0.8V
20 ns
20 ns
20 ns
V
CC
+ 2.0V
V
CC
+ 0.5V
+ 2.0V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS29F040-90LC | 5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-90LI | 5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-90TC | 5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-90TI | 5V 512K x 8 CMOS FLASH EEPROM |
| AS29LV160 | 3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS29F040-90LC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-90LI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-90TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-90TI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040CW-120/883C | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:512K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY |
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