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參數(shù)資料
| 型號(hào)： | AS29F040-120TI |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 5V 512K x 8 CMOS FLASH EEPROM |
| 中文描述： | 512K X 8 FLASH 5V PROM, 120 ns, PDSO32 |
| 封裝： | 8 X 20 MM, TSOP-32 |
| 文件頁(yè)數(shù)： | 7/18頁(yè) |
| 文件大?。?/td> | 341K |
| 代理商： | AS29F040-120TI |
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DATA polling
(DQ7)
Only active during automated on-chip algorithms or sector erase time outs. DQ7 reflects complement
of data last written when read during the automated on-chip algorithm (0 during erase algorithm);
reflects true data when read after completion of an automated on-chip algorithm (1 after completion of
erase agorithm).
Active during automated on-chip algorithms or sector time outs. DQ6 toggles when CE or OE toggles,
or an Erase Resume command is invoked. When the automated on-chip algorithm is complete, DQ6
stops toggling and valid data can be read. DQ6 is valid after the rising edge of the fourth pulse of WE
during programming; after the rising edge of the sixth WE pulse during chip erase; after the last rising
edge of the sector erase WE pulse for sector erase. For protected sectors, DQ6 toggles for <1 μs during
writes, and <5 μs during erase (if all selected sectors are protected).
Indicates unsuccessful completion of program/erase operation (DQ5 = 1). DATA polling remains
active; CE powers the device down to 2 mA. If DQ5 = 1 during chip erase, all or some sectors are
defective; during sector erase, the sector is defective (in this case, reset the device and execute
aprogram or erase command sequence to continue working with functional sectors); during byte
programming, that particular byte is defective. Attempting to program 0 to 1 will set DQ5 = 1.
Checks whether sector erase timer window is open. If DQ3 = 1, erase is in progress; no commands will
be accepted. If DQ3 = 0, the device will accept additional sector erase commands. Check DQ3 before
and after each Sector Erase command to verify that the command was accepted.
During sector erase, DQ2 toggles with OE or CE only during an attempt to read a sector being erased.
During chip erase, DQ2 toggles with OE or CE for all addresses. If DQ5 = 1, DQ2 toggles only at sector
addresses where failure occurred, and will not toggle at other sector addresses. Use DQ2 in conjunction
with DQ6 to determine whether device is in auto erase or erase suspend mode.
Toggle bit 1 (DQ6)
Exceeding time
limit (DQ5)
Sector erase timer
(DQ3)
Toggle bit 2 (DQ2)
Status
Auto programming (byte)
Program/erase in auto erase
Read erasing sector
Read non-erasing
sector
Program in erase
suspend
Auto programming (byte)
Program/erase in auto erase
Program in erase suspend
DQ7
DQ7
0
1
DQ6
Toggle
Toggle
No toggle
DQ5
0
0
0
DQ3
0
1
0
DQ2
No toggle
Toggle
*
Toggle
In progress
*
Toggles with
OE
or
CE
only for erasing or erase suspended sector addresses.
Toggles with
OE
or
CE
only for erasing or erase suspended sector addresses.
Erase
suspend
mode
Data
Data
Data
Data
Data
DQ7
Toggle
0
0
Toggle
*
Exceeded time limits
DQ7
0
DQ7
Toggle
Toggle
Toggle
1
1
1
0
1
0
No toggle
Toggle
No toggle
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS29F040-150LC | 5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-150LI | 5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-150T | 5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-55LC | 5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-55LI | 5V 512K x 8 CMOS FLASH EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS29F040-150LC | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-150LI | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-150T | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-150TC | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-55LC | 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
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