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參數(shù)資料
| 型號： | AS29F040-120LI |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 5V 512K x 8 CMOS FLASH EEPROM |
| 中文描述： | 512K X 8 FLASH 5V PROM, 120 ns, PQCC32 |
| 封裝： | 0.550 X 0.450 INCH, 0.110 INCH HEIGHT, 0.050 INCH PITCH, PLASTIC, MS-016AE, LCC-32 |
| 文件頁數(shù)： | 4/18頁 |
| 文件大小： | 341K |
| 代理商： | AS29F040-120LI |
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2
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Bus operations defined in "Mode definitions," on page 3.
Reading from or programming to non-erasing sectors allowed in Erase Suspend mode.
Address bit A15 = X = Don’t care for all address commands except Program Address.
Address bit A16 = X = Don’t care for all address commands except Program Address and Sector Address.
Address bit A17 = X = Don’t care for all address commands except Program Address and Sector Address.
Address bit A18 = X = Don’t care for all address commands except Program Address and Sector Address.
Sector
0
1
2
3
4
5
6
7
Equal sector architecture
Addresses
00000h–0FFFFh
10000h–1FFFFh
20000h–2FFFFh
30000h–3FFFFh
40000h–4FFFFh
50000h–5FFFFh
60000h–6FFFFh
70000h–7FFFFh
ID sector address
A17
0
0
1
1
0
0
1
1
Size (Kbytes)
64
64
64
64
64
64
64
64
A18
0
0
0
0
1
1
1
1
A16
0
1
0
1
0
1
0
1
Mode
MFG code (Alliance
Semiconductor)
Device code
A18–A16
A9
A8–A7
A6
A5–A2
A1
A0
Code on DQ0–DQ7
X
V
ID
X
L
X
L
L
52h
X
Sector
address
V
ID
X
Sector
address
L
X
Sector
address
L
H
A4h
01h protected
00h unprotected
Sector protection
V
ID
L
H
L
Command
sequence
Required
bus cycles
1st bus write
cycle
Address
2nd bus write
cycle
Address
Read
Address
3rd bus write
cycle
Address
4th bus read/write
cycle
Address
5th bus write
cycle
Address
6th bus write
cycle
Address
Data
Data
Read
Data
Data
Data
Data
Data
Reset/read
1
XXXXh
F0h
Reset/read
4
5555h
AAh
2AAAh
55h
5555h
F0h
Read
Address
00h
MFR code
01h
Device code
XXX02h
Sector
protection
Program
Address
5555h
Read
Data
Autoselect ID
read
4
5555h
AAh
2AAAh
55h
5555h
90h
52h
A4h
01 = protected
00 = unprotected
Program
4
5555h
AAh
2AAAh
55h
5555h
A0h
Program
Data
AAh
Chip erase
6
5555h
AAh
2AAAh
55h
5555h
80h
2AAAh
55h
5555h
Sector
Address
10h
Sector erase
6
5555h
AAh
2AAAh
55h
5555h
80h
5555h
AAh
2AAAh
55h
30h
Sector erase
suspend
Sector erase
resume
1
XXXXh
B0h
1
XXXXh
30h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS29F040-150TC | 5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040 | 5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-120TC | 5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-120TI | 5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-150LC | 5V 512K x 8 CMOS FLASH EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS29F040-120TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-120TI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-150LC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-150LI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
| AS29F040-150T | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 512K x 8 CMOS FLASH EEPROM |
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