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參數(shù)資料
型號(hào): AS2535
廠商: ams
文件頁數(shù): 16/26頁
文件大?。?/td> 0K
描述: IC TELEPHONE CMOS MULTIFU 28SOIC
標(biāo)準(zhǔn)包裝: 27
系列: *
Data She et AS25 33-36
austriamicrosystems
Revision 8.10
Page 22 of 25
Vertical Structure of Bond Pads
Process CXQ/CXB – FAB B
General Conditions
Passivation
200 nm silicon oxynitride + 550 nm silicon nitride
Marking of Failure Dice
Ink Dots, water resistant, Diameter 0.4...1.2 mm
Allowed Loss after Assembly
< 5% in average
< 10% for a single delivery lot
Compensation is limited to replacement of the number of defectives exceeding the above
allowances.
Quantity of dice per delivery lot Only complete wafers can be delivered, therefore the number of good dice delivered may
differ from the order quantity up to
±1000 pcs.
Storage Conditions
Dice on wafer or dice on foil must be stored in originally sealed boxes or bags.
For storage period - see below.
Except for RMA, opened boxes or bags will not be accepted by austriamicrosystems for return
Conditions for Delivery as Wafer
Wafer diameter
200 mm (ams-FAB-B) or 150 mm (XFAB)
Wafer thickness
380
± 20 m (ams-FAB-B) or 640 ± 20 m (XFAB)
Back finishing
back grinding, silicon
Scribe lane width
100
± 20 m
Packing
Wafer Box Ultrapack 200 / sealed in foil bags
Max. Storage time in sealed
box
6 month, Tamb = 25
° C
Layer Specification
metal 2
upper layer:
lower layer:
960 nm AISiCu
98.5% Aluminium
1.0% Silicon
0.5 % Copper
40 nm Titanium
metal 1
upper layer:
lower layer:
450 nm AISiCu
98.5 % Aluminium
1.0% Silicon
0.5 % Copper
40 nm Titanium
metal 1 barrier
upper layer
lower layer
80nm Titanium Nitride
30nm Titanium
polysilicon
270 nm polysilicon
oxide
460 nm thermal oxide
silicon substrate
polysilicon
Si
substrate
oxide
metal 1 barrier
metal 1
metal 2
ams
AG
Technical
content
still
valid
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