參數(shù)資料
型號: AS1745G-T
廠商: AUSTRIAMICROSYSTEMS AG
元件分類: 數(shù)據(jù)轉(zhuǎn)換
英文描述: Dual 4Ω SPDT Switch NO/NC; Package Type: MSOP-10
中文描述: DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO10
封裝: MSOP-10
文件頁數(shù): 4/16頁
文件大?。?/td> 521K
代理商: AS1745G-T
www.austriamicrosystems.com
Revision 1.53
4 - 16
AS1744/AS1745
Data Sheet
- Electrical Characteristics
6 Electrical Characteristics
V+ = +4.5 to 5.5V, V
IH
= +2.4V, V
IL
= +0.8V, T
AMB
= T
MIN
to T
MAX
(unless otherwise specified). Typ Values @T
AMB
= +25oC.
Table 3. +5V Supply Electrical Characteristics
Symbol
Parameter
Analog Switch
V
COM
x
,
V
NO
x
,
V
NC
x
Conditions
Min
Typ
Max
Unit
Analog Signal
Range
0
V+
V
R
ON
ON-Resistance
V+ = 4.5V, I
COM
x
= 10mA,
V
NO
x
or V
NC
x
= 0 to V+
T
AMB
= +25oC
T
AMB
= T
MIN
to T
MAX
T
AMB
= +25oC
2.5
4
Ω
4.5
0.2
Δ
R
ON
ON-Resistance
Match Between
Channels
1
ON-Resistance
Flatness
2
NO
x
or NC
x
Off-
Leakage Current
3
COM
x
Off-
Leakage Current
3
COM
x
On-
Leakage Current
3
V+ = 4.5V, I
COM
x
= 10mA,
V
NO
x
or V
NC
x
= 0 to V+
0.1
Ω
T
AMB
= T
MIN
to T
MAX
0.4
R
FLAT(ON)
V+ = 4.5V, I
COM
x
= 10mA,
V
NO
x
or V
NC
x
= 0 to V+
T
AMB
= +25oC
T
AMB
= T
MIN
to T
MAX
T
AMB
= +25oC
T
AMB
= T
MIN
to T
MAX
-0.3
T
AMB
= +25oC
T
AMB
= T
MIN
to T
MAX
T
AMB
= +25oC
T
AMB
= T
MIN
to T
MAX
0.5
1
Ω
1.2
0.1
0.3
0.1
3
0.4
4
I
NO
x
(OFF)
,
I
NC
x
(OFF)
V+ = 5.5V, V
COM
x
= 1 or 4.5V,
V
NO
x
or V
NC
x
= 4.5 or 1V
-0.1
±0.01
nA
I
COM
x
(OFF)
V+ = 5.5V, V
COM
x
= 1 or 4.5V,
V
NO
x
or V
NC
x
= 4.5 or 1V
-0.1
-3
-0.4
-4
±0.01
nA
I
COM
x
(ON)
V+ = 5.5V, V
COM
x
= 4.5 or 1V,
V
NO
x
or V
NC
x
= 4.5 or 1V
±0.1
nA
Logic Input
:
IN
x
V
IH
V
IL
Input Logic High
Input Logic Low
Input Leakage
Current
2.4
V
V
0.8
I
IH
, I
IL
V
IN
x
= 0 or +5.5V
-100
5
100
nA
Switch Dynamic Characteristics
t
ON
Turn On Time
3
V
NO
x
or V
NC
x
= 3V, R
LOAD
= 300
Ω
,
C
LOAD
= 35pF, Figure 12
T
AMB
= +25oC
T
AMB
= T
MIN
to T
MAX
T
AMB
= +25oC
T
AMB
= T
MIN
to T
MAX
T
AMB
= +25oC
T
AMB
= T
MIN
to T
MAX
14
17
18
6
8
ns
t
OFF
Turn Off Time
3
V
NO
x
or V
NC
x
= 3V, R
LOAD
= 300
Ω
,
C
LOAD
= 35pF, Figure 12
4
ns
t
BBM
Break-Before-
Make
3
Charge Injection
NO
x
, NC
x
Off-
Capacitance
COM
x
On-
Capacitance
V
NO
x
or V
NC
x
= 3V, R
LOAD
= 300
Ω
,
C
LOAD
= 35pF, Figure 13
10
ns
1
Q
V
GEN
= 2V, R
GEN
= 0, C
LOAD
= 1.0nF, Figure 14
7
pC
C
NOx(OFF)
,
C
NCx(OFF)
V
NO
x
or V
NC
x
= GND, f = 1MHz, Figure 15
20
pF
C
COM
x
(ON)
V
COM
x
= GND, f = 1MHz, Figure 15
56
pF
V
ISO
Off-Isolation
4
f = 10MHz, R
LOAD
= 50
Ω
, C
LOAD
= 5pF,
Figure 16
f = 1MHz, R
LOAD
= 50
Ω
, C
LOAD
= 5pF,
Figure 16
f = 10MHz, R
LOAD
= 50
Ω
, C
LOAD
= 5pF,
Figure 16
f = 1MHz, R
LOAD
= 50
Ω
, C
LOAD
= 5pF,
Figure 16
-52
dB
-85
V
CT
Crosstalk
5
-52
dB
-90
THD
Total Harmonic
Distortion
f = 20Hz to 20kHz, V
NO
x
= 5Vp-p, R
LOAD
= 600
Ω
0.1
%
Power Supply
I+
Positive Supply
Current
V+ = 5.5V, V
INx
= 0 or V+
0.01
1.0
μA
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