參數(shù)資料
型號(hào): AS1506-BTDT-10
廠商: AUSTRIAMICROSYSTEMS AG
元件分類: 數(shù)字電位計(jì)
英文描述: 256-Tap DigiPot SPI EEPROM; Package Type: TDFN(3x3)-8; Resistance: 10,00
封裝: TDFN(3x3)-8
文件頁數(shù): 5/17頁
文件大小: 535K
代理商: AS1506-BTDT-10
www.austriamicrosystems.com
Revision 1.02
5 - 17
AS1506
Datasheet - Electrical Characteristics
Timing Characteristics
V
DD
= +2.7 to +5.5V, HIGH = V
DD
, LOW = GND, T
AMB
= -40 to +85
o
C. Typ values are at V
DD
= +5.0V, T
AMB
= +25oC
(unless otherwise specified). See
Figure 20 on page 9
. Digital timing data is guaranteed by design and characteriza-
tion, and is not production tested.
Table 5. Timing Characteristics
Symbol
Parameter
f
SCLK
SCLK Frequency
t
CP
SCLK Clock Period
t
CH
SCLK Pulse-Width High
t
CL80
SCLK Pulse-Width Low
t
CSS
CSN-Fall to SCLK Rise Setup
t
CSH
SCLK-Rise to CSN-Rise Hold
t
DS
SDIO to SCLK Setup
t
DH
SDIO Hold after SCLK
t
CS0
SCLK-Rise to CSN-Fall Delay
t
CS1
CSN-Rise to SCLK-Rise Hold
t
CSW
CSN Pulse-Width High
t
BUSY
Write Non-Volatile Register Busy Time
Dynamic Characteristics
Wiper -3dB Bandwidth
6
AS1506-10
AS1506-50
AS1506-100
AS1506-10
AS1506-50
AS1506-100
1200
220
120
1100
1600
2200
kHz
t
S
Wiper Settling Time
7
ns
Non-Volatile Memory Reliability
Data Retention
8
T
AMB
= +85oC
150
Years
Endurance
8
T
AMB
= +25oC
T
AMB
= +85oC
10M
1M
Write
Cycles
t
BUSY
Write Non-Volatile Register
Busy Time
20
ms
1. The programming current operates only during power-up and non-volatile memory writes.
2. DNL and INL are measured with the potentiometer configured as a voltage-divider with HIGH = V
DD
and LOW =
GND. The wiper terminal is unloaded and measured with a high-input-impedance voltmeter.
3. DNL and INL are measured with the potentiometer configured as a variable resistor. HIGH is unconnected and
LOW = GND. For the 5V condition, the wiper terminal is driven with a source current of 400μA @ 10k
Ω
, 80μA @
50k
Ω
, 40μA @ 100k
Ω
. In 3V conditions, the wiper terminal is driven with a source current of 200μA @ 10k
Ω
,
40μA @ 50k
Ω
, 20μA @ 100k
Ω
.
4. The wiper resistance is measured using the source currents given in Note 3. The number is the worst case
resistance over TAP positions.
5. The device draws higher supply current when the digital inputs are driven with voltages between (V
DD
- 0.5V)
and (GND + 0.5V).
6. Wiper at midscale with a 10pF load (DC measurement) V
DD
= 5V, LOW = GND. An AC source (5V peak to peak
sinus signal) is applied to HIGH and the WIPER output is measured. A 3dB bandwidth occurs when the AC
WIPER/HIGH value is 3dB lower than the DC WIPER/HIGH value.
7. Wiper-settling time is the worst-case 0 to 50% rise-time measured between successive wiper positions. HIGH =
V
DD
, LOW = GND; WIPER is unloaded and measured with a 10pF load.
8. This parameter is not tested but ensured by characterization.
Condition
Min
Typ
Max
5
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
200
40
40
40
40
10
0
40
40
200
20
Table 4. Electrical Characteristics (Continued)
Symbol
Parameter
Condition
Min
Typ
Max
Unit
相關(guān)PDF資料
PDF描述
AS1506-BTDT-100 256-Tap DigiPot SPI EEPROM; Package Type: TDFN(3x3)-8; Resistance: 100,00
AS1506-BTDT-50 256-Tap DigiPot SPI EEPROM; Package Type: TDFN(3x3)-8; Resistance: 50,00
AS1507-BTDT-10 2x 256-Tap DigiPot SPI EEPROM; Package Type: TQFN(4x4)-16; Resistance: 10,00
AS1507-BTDT-100 2x 256-Tap DigiPot SPI EEPROM; Package Type: TQFN(3x3)-16; Resistance: 100,00
AS1507-BTDT-50 2x 256-Tap DigiPot SPI EEPROM; Package Type: TQFN(3x3)-16; Resistance: 50,00
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