參數(shù)資料
型號(hào): AS1364-BTDT-AD
廠(chǎng)商: AUSTRIAMICROSYSTEMS AG
元件分類(lèi): 基準(zhǔn)電壓源/電流源
英文描述: 1A LDO, Low Noise
文件頁(yè)數(shù): 12/19頁(yè)
文件大小: 787K
代理商: AS1364-BTDT-AD
AS1364
Datasheet - Application Information
www.austriamicrosystems.com
Revision 1.8
12 - 19
9.3 Power Dissipation
Maximum power dissipation (PD) of the LDO is the sum of the power dissipated by the internal series MOSFET and the quiescent current
required to bias the internal voltage reference and the internal error amplifier, and is calculated as:
Watts
(EQ 5)
Internal power dissipation as a result of the bias current for the internal voltage reference and the error amplifier is calculated as:
Watts
(EQ 6)
Total LDO power dissipation is calculated as:
Watts
(EQ 7)
9.4 Junction Temperature
Under all operating conditions, the maximum junction temperature should not be allowed to exceed 125oC (unless the data sheet specifically
allows). Limiting the maximum junction temperature requires knowledge of the heat path from junction to case (
JC
oC/W fixed by the IC
manufacturer), and adjustment of the case to ambient heat path (
CA
oC/W) by manipulation of the PCB copper area adjacent to the IC position.
Figure 19. Package Physical Arrangements
Figure 20. Steady State Heat Flow Equivalent Circuit
PD
MAX
Seriespass
I
LOAD MAX
=
V
IN MAX
V
OUT MIN
PD
MAX
Bias
V
IN MAX
I
Q
=
PD
MAX
Total
PD
MAX
Seriespass
PD
MAX
+
Bias
=
Package
Lead Frame
PCB
Exposed Pad
Chip
TDFN Package
Bond Wire
Junction
T
J
°C
Package
T
C
°C
PCB/Heatsink
T
S
°C
Ambient
T
A
°C
Chip
Power
R
JC
R
CS
R
SA
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