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參數(shù)資料
| 型號： | ARRAYS |
| 廠商： | Electronic Devices, Inc. |
| 英文描述： | NIGHT VISION H.V. RECTIFIER DIODES & ARRAYS |
| 中文描述： | 夜視儀高壓整流二極管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 60K |
| 代理商： | ARRAYS |
NVD NVDX ARRAYS
NIGHT VISION
H.V. RECTIFIER DIODES & ARRAYS
Diode Specifications @
o
23 C
(Absolute Maximum Unless
Otherwise Specified)
NVDX Diode
(Standard Recovery)
NVD Diode
And Diode Arrays
(Fast Recovery)
PRV
1,000 Vdc
1,200 Vdc
IF
5.0mA
5.0mA
V @ 1 mA dc
F
6.0 V
4.0 V
Junction Capacitance
0.35pF . @500 Vdc
I @ 1,000 Vdc @ 23 C
R
0.5 nanoamperes
R
5.0 nanoamperes
I @ 500 Vdc
R
1.0 nanoamperes typical
5.0 nanoamperes max.
R
25 nanoamperes
R
0.1 nanoamperes typical
0.25 nanoamperes max.
R
1.0 nanoamperes typical
2.0 nanoamperes max.
T
(
Reverse Recovery Time
),Fig.4
rr
50 ns typical
100 ns max.
o
o
-55 C to +100 C
o
o
-63 C to +125 C
o
o
-55 C to +100 C
o
o
-63 C to +125 C
O
O
O
O
O
EDI reserves the right to change these specifications at any time without notice.
These diodes and arrays have been specifically designed for use in night vision and image
intensifier equipment power supplies. They offer unusual characteristics that have not been
previously available. As a result of a proprietary EDI diffusion process, they feature small size
and a unique combination of extremely low leakage and ultra fast recovery time.
I @ 1,000 Vdc @ 55 C
I @ 500 Vdc @ 55 C
I @ 250 Vdc @ 23 C
I @ 250 Vdc @ 55 C
Temperature Range: Operating
Temperature Range: Storage
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