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參數(shù)資料
| 型號(hào)： | ARJ2003X |
| 英文描述： | SMD RELAYS WITH 8GHz CAPABILITIES |
| 中文描述： | 貼片繼電器與8GHz的能力 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 602K |
| 代理商： | ARJ2003X |
RJ(ARJ2)
2
RJ-RELAYS
SMD RELAYS
WITH
8
GHz CAPABILITIES
.551
.354
.323
.551
.354
.323
FEATURES
Excellent high frequency characteris-
tics (50
, at 5GHz)
V.S.W.R.: Max. 1.25
Insertion loss: Max. 0.5dB
Isolation: Min. 35dB
(Between open contacts)
Min. 30dB
(Between contact sets)
Surface mount terminal
Surface mount terminals are now stan-
dard so there is much less work in design-
ing PC boards.
Small size
Size: 14.00 (L)
×
9.00 (W)
×
8.20 (H) mm
.551 (L)
×
.354 (W)
×
.323 (H) inch
TYPICAL
APPLICATIONS
Measurement equipment market
Attenuator circuits, spectrum analyzer,
oscilloscope, mobile equipment, tester
Mobile telecommunication market
IMT2000, microwave communication
Medical instruments market
SPECIFICATIONS
Contact
Arrangement
Contact material
Initial contact resistance
Coil (at 20
°
C,
68
°
F
)
Characteristics
Initial insulation resistance*
1
Remarks
* Specifications will vary with foreign standards certification ratings.
*
1
Measurement at same location as "Initial breakdown voltage" section.
*
2
Detection current: 10mA
*
3
Nominal operating voltage applied to the coil, excluding contact bounce time.
*
4
By resistive method, nominal voltage applied to the coil, 5GHz, V.S.W.R.
&
1.25
*
5
Half-wave pulse of sine wave: 6ms, detection time: 10
μ
s.
*
6
Pulse of sine wave: 11ms.
*
7
Detection time: 10
μ
s
*
8
Refer to 6. Conditions for operation, transport and storage mentioned in NOTES
2 Form C
Gold alloy
Max. 150m
1W (at 5 GHz, Impedance
50
, V.S.W.R.
&
1.25)
10mA 10V DC (resistive load)
1W (at 5 GHz, Impedance
50
, V.S.W.R.
&
1.25)
30 V DC
0.3 A DC
Max. 1.25
Rating
Contact rating
Contact carrying power
Max. switching voltage
Max. switching current
V.S.W.R.
Insertion loss
(without D.U.T. board’s loss)
Between
open contacts
Between
contact sets
High frequency
characteristics
(Initial)
(~5GHz,
Impedance
50
)
Max. 0.5dB
Isolation
Min. 35dB
Min. 30dB
Input power
1W (at 5GHz, impedance 50
,
V.S.W.R.
&
1.25, at 20
°
C)
10
7
Expected life
(min. opera-
tions)
Mechanical (at 180 cpm)
1W, at 5GHz,
V.S.W.R.
&
1.25
10mA 10V DC
(resistive load)
Electrical
(at
20cpm)
10
5
10
6
Nominal operating power
200 mW
150 mW
Single side stable
2 coil latching
Min. 500 M
(at 500 V DC)
500 Vrms
500 Vrms
500 Vrms
Max. 5ms
Initial breakdown
voltage*
2
Between open contacts
Between contact sets
Between contact and coil
Operate time [Set time]*
3
(at 20
°
C)
Release time (without diode)[Reset time]*
3
(at 20
°
C)
Temperature rise (at 20
°
C)*
4
Max. 5ms
Max. 50
°
C
Min. 500 m/s
2
Min. 1,000 m/s
2
10 to 55 Hz at double
amplitude of 3 mm
10 to 55 Hz at double
amplitude of 5 mm
–30
°
C to 70
°
C
–22
°
F to 158
°
F
Shock resistance
Functional*
5
Destructive*
6
Vibration resistance
Functional*
7
Destructive
Conditions for operation,
transport and storage*
8
(Not freezing and condens-
ing at low temperature)
Unit weight
Ambient temp.
Humidity
5 to 85% R.H.
Approx. 3 g
.11 oz
ORDERING INFORMATION
2
Ex. ARJ
Contact arrangement
Terminal shape
Operating function
Packing style
Coil voltage (DC)
03
: 3V
4H: 4.5V
12
: 12V
24
: 24V
Nil: Standard PC board terminal
A: Surface-mount terminal
2: 2 Form C
0: Single side stable
2: 2 coil latching
Nil: Carton packing
X: Tape end reel packing
(picked from 1/2/3-pin side)
Z: Tape and reel packing (picked
from 6/7/8-pin side)
Note: Tape and reel packing symbol “-Z” is not marked on the relay. “X” type tape and reel packing (picked from 1/2/3-pin side) is
also available. Suffix “X” instead of “Z”.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ARJ2003Z | SMD RELAYS WITH 8GHz CAPABILITIES |
| ARJ2012 | SMD RELAYS WITH 8GHz CAPABILITIES |
| ARJ2012X | SMD RELAYS WITH 8GHz CAPABILITIES |
| ARJ2012Z | SMD RELAYS WITH 8GHz CAPABILITIES |
| ARJ2024 | SMD RELAYS WITH 8GHz CAPABILITIES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ARJ2003Z | 制造商:NAIS 制造商全稱(chēng):Nais(Matsushita Electric Works) 功能描述:SMD RELAYS WITH 8GHz CAPABILITIES |
| ARJ2012 | 功能描述:高頻/射頻繼電器 2 Form C, 12VDC 10mA 10VDC 50ohms RoHS:否 制造商:Omron Electronics 觸點(diǎn)形式:2 Form C (DPDT-BM) 觸點(diǎn)電流額定值: 線圈電壓:5 VDC 線圈類(lèi)型:Non-Latching 頻率: 功耗:100 mW 端接類(lèi)型:Solder Terminal 絕緣:20 dB to 30 dB at 1 GHz 介入損耗:0.2 dB at 1 GHz |
| ARJ2012J | 制造商:Panasonic Electric Works 功能描述: |
| ARJ2012X | 制造商:NAIS 制造商全稱(chēng):Nais(Matsushita Electric Works) 功能描述:SMD RELAYS WITH 8GHz CAPABILITIES |
| ARJ2012Z | 制造商:NAIS 制造商全稱(chēng):Nais(Matsushita Electric Works) 功能描述:SMD RELAYS WITH 8GHz CAPABILITIES |
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