參數(shù)資料
型號： ARF681S45
廠商： POSEICO SPA
英文描述： FAST RECOVERY DIODE
中文描述： 快速恢復(fù)二極管
文件頁數(shù)： 1/2頁
文件大?。?/td> 122K
代理商： ARF681S45
FAST RECOVERY DIODE
ARF681
Repetitive voltage up to
Mean forward current
Surge current
4500
V
1145
A
25
kA
TARGET SPECIFICATION
mar 03 - ISSUE : 2
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
125
4500
V
V
RSM
Non-repetitive peak reverse voltage
125
4600
V
I
RRM
Repetitive peak reverse current
V=VRRM
125
150
mA
V
DC LINK
Permanent DC voltage
125
2800
V
CONDUCTING
I
F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
1145
A
I
F (AV)
Mean forward current
180° square,50 Hz,Th=55°C,double side cooled
1185
A
I
FSM
Surge forward current
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
125
25
kA
I2 t
I2 t
3125 x1E3
A2s
V
FM
Forward voltage
Forward current = =2000 A
125
3.55
V
V
F(TO)
Threshold voltage
125
1.95
V
r
F
Forward slope resistance
125
0.800
mohm
SWITCHING
Q rr
Reverse recovery charge
I F =
VR =
1000 A
100 V
di/dt=
250 A/μs
125
μC
I rr
Peak reverse recovery current
125
A
t rr
Reverse recovery time
I F =
2100 A
μs
Q rr
Reverse recovery charge
di/dt=
1000 A/μs
μC
I rr
Peak reverse recovery current
VR =
1800 V
125
A
s
Softness (s-factor), min
E
OFF
Turn off energy dissipation
J
V
FR
Peak forward recovery
di/dt=
400 A/μs
125
V
MOUNTING
R
th(j-h)
Thermal impedance
Junction to heatsink, double side cooled
14.0
°C/kW
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
6.0
°C/kW
T
j
Operating junction temperature
-30 / 125
°C
F
Mounting force
35.0 / 40.0
kN
Mass
850
g
ORDERING INFORMATION : ARF681 S 45
standard specification
VRRM/100
1500
730
2200
1150
FOR IGBT, IEGT, GCT APPLICATIONS
SNUBBERLESS OPERATION
LOW LOSSES SOFT RECOVERY
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. +39 010 6556234 - Fax +39 010 6557519
Sales Office:
Tel. +39 010 6556775 - Fax +39 010 6442510
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