FAST RECOVERY DIODE
ARF674
Repetitive voltage up to
Mean forward current
Surge current
4500
V
945
A
15
kA
FINAL SPECIFICATION
feb 97 - ISSUE : 03
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
125
4500
V
V
RSM
Non-repetitive peak reverse voltage
125
4600
V
I
RRM
Repetitive peak reverse current
V=VRRM
125
80
mA
CONDUCTING
I
F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
945
A
I
F (AV)
Mean forward current
180° square,50 Hz,Th=55°C,double side cooled
940
A
I
FSM
Surge forward current
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
125
15
kA
I2 t
I2 t
1125 x1E3
A2s
V
FM
Forward voltage
Forward current = 1570
A
25
3
V
V
F(TO)
Threshold voltage
125
1.90
V
r
F
Forward slope resistance
125
0.700
mohm
SWITCHING
t rr
Reverse recovery time
I F =
500 A
8
μs
Q rr
Reverse recovery charge
di/dt=
30 A/μs
125
600
μC
I rr
Peak reverse recovery current
VR =
100 V
150
A
s
Softness (s-factor), min
0.4
V
FR
Peak forward recovery
di/dt=
400 A/μs
42
V
MOUNTING
R
th(j-h)
Thermal impedance
Junction to heatsink, double side cooled
21
°C/kW
T
j
Operating junction temperature
-30 / 125
°C
F
Mounting force
22.0 / 24.5
kN
Mass
520
g
ORDERING INFORMATION : ARF674 S 45
standard specification
VRRM/100
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510