參數(shù)資料
型號(hào)： ARF463B
廠商： Advanced Power Technology Ltd.
英文描述： N-CHANNEL ENHANCEMENT MODE
中文描述： N溝道增強(qiáng)模式
文件頁數(shù)： 1/4頁
文件大小： 104K
代理商： ARF463B
0
Lead Temperature: 0.063" from Case for 10 Sec.
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 μA)
On State Drain Voltage
1
(I
D
(ON) = 4.5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 4.5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
MIN
TYP
MAX
500
5.0
25
250
±100
2
3
3
5
UNIT
Volts
μA
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
q
JC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Junction to Case
Operating and Storage Junction Temperature Range
ARF463A/B
500
500
9
±30
180
0.50
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
°C/W
°C
RF POWER MOSFETs
N-CHANNEL ENHANCEMENT MODE
125V
100W
100MHz
The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
optimized for both linear and high efficiency classes of operation.
Specified 125 Volt, 81.36 MHz Characteristics:
Output Power = 100 Watts.
Gain = 15dB (Class AB)
Efficiency = 75% (Class C)
Low Cost Common Source RF Package.
Low Vth thermal coefficient.
Low Thermal Resistance.
Optimized SOA for Superior Ruggedness.
TO-247
ARF463A
ARF463B
G
D
S
Common
Source
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
Chemin de Magret
F-33700 Merignac - France
Phone: (33)5 57 9215 15
FAX: (33)556 4797 61
相關(guān)PDF資料
PDF描述
ARF463S45 FAST RECOVERY DIODE
ARF463 FAST RECOVERY DIODE
ARF464A RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
ARF464B RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
ARF526 FAST RECOVERY DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ARF463BG 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 500V 9A TO-247 制造商:Microsemi Corporation 功能描述:ARF463B Series 500 V 81.36 MHz SMT N-Channel RF Power Mosfet - TO-247-3 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET
ARF463BP1 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFETs
ARF463BP1G 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 500V 9A TO-247 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET
ARF463S45 制造商:POSEICO 制造商全稱:POSEICO 功能描述:FAST RECOVERY DIODE
ARF464A 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
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