- 您現(xiàn)在的位置：買賣IC網 > PDF目錄366583 > ARF461A (Advanced Power Technology Ltd.) N-CHANNEL ENHANCEMENT MODE PDF資料下載
參數(shù)資料
| 型號： | ARF461A |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE |
| 中文描述： | N溝道增強模式 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 97K |
| 代理商： | ARF461A |
0
Lead Temperature: 0.063" from Case for 10 Sec.
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 μA)
On State Drain Voltage
1
(I
D
(ON) = 3.25A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 3.25A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
MIN
TYP
MAX
1000
6.5
25
250
±100
3
4
3
5
UNIT
Volts
μA
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
q
JC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Junction to Case
Operating and Storage Junction Temperature Range
ARF461A/B
1000
1000
6.5
±30
250
0.50
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
°C/W
°C
RF POWER MOSFETs
N-CHANNEL ENHANCEMENT MODE
250V
150W
65MHz
The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
optimized for both linear and high efficiency classes of operation.
Specified 250 Volt, 40.68 MHz Characteristics:
Output Power = 150 Watts.
Gain = 13dB (Class AB)
Efficiency = 75% (Class C)
Low Cost Common Source RF Package.
Low Vth thermal coefficient.
Low Thermal Resistance.
Optimized SOA for Superior Ruggedness.
TO-247
ARF461A
ARF461B
G
D
S
Common
Source
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
Chemin de Magret
F-33700 Merignac - France
Phone: (33)5 57 9215 15
FAX: (33)556 4797 61
相關PDF資料 |
PDF描述 |
|---|---|
| ARF462A | N-CHANNEL ENHANCEMENT MODE |
| ARF462B | N-CHANNEL ENHANCEMENT MODE |
| ARF462 | FAST RECOVERY DIODE |
| ARF462S45 | FAST RECOVERY DIODE |
| ARF463A | N-CHANNEL ENHANCEMENT MODE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ARF461AG | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 1000V TO-247 制造商:Microsemi Corporation 功能描述:ARF461A Series N-Channel 150 W 65 MHz Flange Mount RF Power Mosfet - TO-247-3 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF461B | 制造商:Microsemi Corporation 功能描述:ARF461B Series N-Channel 150 W 65 MHz Flange Mount RF Power Mosfet - TO-247-3 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF461BG | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 1000V TO-247 制造商:Microsemi Corporation 功能描述:ARF461B Series N-Channel 150 W 65 MHz Flange Mount RF Power Mosfet - TO-247-3 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF461CG | 功能描述:RF MOSFET N-CH 1000V TO247 制造商:microsemi corporation 系列:- 包裝:散裝 零件狀態(tài):停產 晶體管類型:N 通道 頻率:65MHz 增益:15dB 電壓 - 測試:50V 額定電流:25μA 噪聲系數(shù):- 功率 - 輸出:150W 電壓 - 額定:1000V 封裝/外殼:TO-247-3 供應商器件封裝:TO-247 標準包裝:30 |
| ARF462 | 制造商:POSEICO 制造商全稱:POSEICO 功能描述:FAST RECOVERY DIODE |
發(fā)布緊急采購，3分鐘左右您將得到回復。