參數(shù)資料
型號： ARF450
元件分類： 功率晶體管
英文描述： 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁數(shù)： 1/4頁
文件大?。?/td> 178K
代理商： ARF450
050-4910
Rev
C
12-2000
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS(ON)
I
DSS
I
GSS
g
fs
g
fs1
/ gfs2
V
GS(TH)
V
GS(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250 A)
On State Drain Voltage 1 (I
D(ON) = 5.5A, VGS = 10V)
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Forward Transconductance (V
DS = 25V, ID = 5.5A)
Forward Transconductance Ratio (V
DS = 25V, ID = 5.5A)
Gate Threshold Voltage (V
DS = VGS, ID = 50mA)
Delta Gate Threshold Voltage (V
DS = VGS, ID = 50mA)
MIN
TYP
MAX
500
5
25
250
±100
35.8
0.9
1.1
3
5
0.1
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
T
J,TSTG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C = 25°C
Gate-Source Voltage
Total Device Dissipation @ T
C = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF450
450
11
±30
650
-55 to 200
300
UNIT
Volts
Amps
Volts
Watts
°C
RF POWER MOSFET
N- CHANNEL ENHANCEMENT MODE
150V 500W 120MHz
The ARF450 is a matched pair of RF power transistors in a common source configuration. It is designed for push-pull
or parallel operation in scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
Specified 150 Volt, 81.36 MHz Characteristics:
Output Power = 500 Watts.
Gain = 13dB (Class C)
Efficiency = 75%
High Performance Push-Pull RF Package.
Very High Breakdown for Improved Ruggedness.
Low Thermal Resistance.
Nitride Passivated Die for Improved Reliability.
ARF450
Common Source
Push-Pull Pair
ARF450
BeO
11405
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA:
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028 FAX: (541)388 -0364
EUROPE:
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 9761
APT Website - http://www.advancedpower.com
THERMAL CHARACTERISTICS
Symbol
RθJC
RθCS
Characteristic (per package unless otherwise noted)
Junction to Case (per section)
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN
TYP
MAX
0.54
0.1
UNIT
°C/W
相關(guān)PDF資料
PDF描述
ARF460A VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
ARF460B VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
ARF474 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
ARF520 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
ARF521 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ARF460A 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
ARF460AG 功能描述:FET RF N-CH 500V 14A TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
ARF460B 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
ARF460BG 功能描述:FET RF N-CH 500V 14A TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
ARF461 制造商:International Rectifier 功能描述:CONV DC-DC SNGL OUT -50 TO 50VIN - Bulk
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