參數(shù)資料
型號： AR1L3N
元件分類： 小信號晶體管
英文描述： 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： SC-43B, 3 PIN
文件頁數(shù)： 1/6頁
文件大小： 116K
代理商： AR1L3N
1998
Document No. D16172EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
AR1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
High current drives such as IC output and actuator available
On-chip bias resistor
Low power consumption during drive
AR1 SERIES LISTS
Products
R1 (K
)R2 (K)
AR1A3M
1.0
AR1F3P
2.2
10
AR1L3N
4.7
10
AR1A4M
10
AR1L2Q
0.47
4.7
AR1F2Q
0.22
2.2
AR1A4A
10
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
10
V
Collector current (DC)
IC(DC)
1.0
A
Collector current (Pulse)
IC(pulse) *
2.0
A
Base current (DC)
IB(DC)
0.02
A
Total power dissipation
PT
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50 %
Electrode Connection
1. Emitter
EIAJ
: SC-43B
2. Collector JEDEC: TO-92
3. Base
IEC
: PA33
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